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| TiN/Ti MULTILAYER FILMS SYNTHESIZED BY MID-FREQUENCY DUAL-MAGNETRON SPUTTERING |
| YU Xiang; WANG Chengbiao;LIU Yang; YU Deyang |
| 中国地质大学（北京）工程技术学院 |
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Cite this article:
YU Xiang; WANG Chengbiao; LIU Yang; YU Deyang. TiN/Ti MULTILAYER FILMS SYNTHESIZED BY MID-FREQUENCY DUAL-MAGNETRON SPUTTERING. Acta Metall Sin, 2006, 42(6): 662-666 .
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Abstract A series of Ti-based multilayered films were deposited using a new
mid-frequency dual-magnetron sputtering system. The influences of
Ti buffer layer on the film hardness and adhesion were investigated.
The forming mechanism of macro-particles and caves was analyzed,
and then the orthogonal design and variance analysis were used to
discuss the influences of the target currents, the pressures of
working gases and the substrate bias voltages on the densities of
the surface defects, and the process parameters were optimized
accordingly. The results show that the target current has the most
important influence on the defect density, and the effects of the
pressures and the substrate bias voltages decrease in turn; in the
condition of the target current of 20 A, the gases pressure of 0.31 Pa,
the bias voltages in a range of -160 - -300 V and the thickness
of Ti buffer layers, x=0.12 um, the high-quality TiN/Ti multilayer
film is obtained, whose Vickers microhardness HV 0.2 N is 2250,
film-substrate adhesion (critical load L c) is 48 N, and
surface defect density is 58 mm -2.
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Received: 23 September 2005
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