PREPARATION OF Cu-In FILM BY ELECTRODEPOSITION UNDER CONSTANT CURRENT

Acta Metall Sin

2006, Vol. 42

Issue (6): 667-672 DOI:

Research Articles

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PREPARATION OF Cu-In FILM BY ELECTRODEPOSITION UNDER CONSTANT CURRENT

Jian Li;Jie Zhu

北京科技大学新金属材料国家重点实验室

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Jian Li; Jie Zhu. PREPARATION OF Cu-In FILM BY ELECTRODEPOSITION UNDER CONSTANT CURRENT. Acta Metall Sin, 2006, 42(6): 667-672 .

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Abstract Cu-In films with chemical composition ratio of 1∶1 are deposited on stainless steel and Mo-coated glass substrate under constant current with Ti worked as anode. The Cu-In precursor film with the thickness of 1 um is uniform and compact. The influences of deposition parameters such as the electrolyte contents, current density, the type and concentration of complexing agent, $etc.$, on films composition and morphology were studied. Those parameters with the exception of current density are allowed to be same when different kinds of substrates are employed. Current plays an important role in affecting the property of precursor films. If the ratio of Cu 2+ to In 3+ is constant, the total concentration of ions showed inappreciable influence on film morphology. The result shows that lauryl sodium sulfate and sodium benzenesulfinate as ideal additives can make the films more flat and smooth. The Cu-In films prepared by such method provide a good foundation for further selenization process obtaining CuInSe 2 film.

Key words: Cu-In alloy film electrodeposition surface morphology

Received: 20 September 2005

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https://www.ams.org.cn/EN/ OR https://www.ams.org.cn/EN/Y2006/V42/I6/667

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