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| PREPARATION OF ALUMINIUM DOPED ZINC OXIDE FILMS AND THE STUDY OF THEIR MICROSTRUCTURE, ELECTRICAL AND OPTICAL PROPERTIES |
| HongMing Zhou;; |
| 中南大学材料科学与工程学院 |
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Cite this article:
HongMing Zhou. PREPARATION OF ALUMINIUM DOPED ZINC OXIDE FILMS AND THE STUDY OF THEIR MICROSTRUCTURE, ELECTRICAL AND OPTICAL PROPERTIES. Acta Metall Sin, 2006, 42(5): 505-510 .
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Abstract Aluminium doped zinc oxide polycrystalline thin films (AZO) were prepared on microscope glass substrates by sol-gel dip-coating process. Zinc acetate solutions of 0.5 M in isopropanol stabilized by diethanolamine and doped with a concentrated solution of aluminium nitrate in ethanol were used. The quantity of aluminium in the sol was varied from 1 to 3 at. %, and the deposition times was varied from 5 to 15. Crystalline ZnO thin films were obtained following an annealing process at temperatures between 300℃ and 500℃ for 1 h. The coatings have been characterized by X-ray diffraction (XRD), optical spectroscopy (UV-Vis), scanning electron microscope (SEM), and electrical resistance measurement. With the annealing temperature increased from 300℃ to 500℃, the film was oriented more preferentially along the (0 0 2) direction, the grain size of the film increased, the transmittance also became higher and the electrical resistivity decreased. The X-ray diffraction analysis revealed single-phase ZnO hexagonal zincite structure. Optical transmittance over 90% in the near UV and VIS regions and electrical resistivity as low as 3.2×10-3 Ω·cm were obtained under such conditions, doping concentration 1 at. %, annealing temperature 500℃, deposition times 10.
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Received: 01 September 2005
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