Abstract Based on a one-dimensional planar sheath model, the kinetic model of pulsed bias arc ion plating (PBAIP) sheath according to temporal evolvement and its analytic expression are presented. Combining the measuring results of plasma parameters in PBAIP process, temporal evolvement disciplinarian of the thickness of PBAIP sheath and ion current density in the sheath, and the effect of pulsed bias magnitude on sheath thickness and ion current are simulated and analyzed. The results indicate that both the thickness of stable-state sheath and the time of sheath formation are far less than the values reported by PSII. The expanding of the PBAIP sheath almost follows the real-time change of pulsed bias voltage, and the sheath thickness under pulsed bias voltage nearly equals to that under DC bias voltage. The results are helpful for making the most of advantages of PBAIP and improvement of its process control.
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