Al掺杂对CuInTe2热电性能的影响

doi:10.11900/0412.1961.2025.00269

金属学报

2026, Vol. 62

Issue (6): 1137-1146 DOI: 10.11900/0412.1961.2025.00269

研究论文

本期目录 | 过刊浏览

Al掺杂对CuInTe₂热电性能的影响

杨二阔¹(

), 张泽宇¹, 王亚松¹, 彭威¹, 历长云¹, 李广书², 康慧君²(

), 王同敏²(

)

1 中国石油大学(北京)克拉玛依校区工学院克拉玛依 834000
2 大连理工大学材料科学与工程学院辽宁省凝固控制与数字化制备技术重点实验室大连 116024

Influence of Al Doping on Thermoelectric Properties of CuInTe₂

YANG Erkuo¹(

), ZHANG Zeyu¹, WANG Yasong¹, PENG Wei¹, LI Changyun¹, LI Guangshu², KANG Huijun²(

), WANG Tongmin²(

)

1 School of Engineering, China University of Petroleum-Beijing at Karamay, Karamay 834000, China
2 Key Laboratory of Solidification Control and Digital Preparation Technology (Liaoning Province), School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China

引用本文:

杨二阔, 张泽宇, 王亚松, 彭威, 历长云, 李广书, 康慧君, 王同敏. Al掺杂对CuInTe₂热电性能的影响[J]. 金属学报, 2026, 62(6): 1137-1146.
Erkuo YANG, Zeyu ZHANG, Yasong WANG, Wei PENG, Changyun LI, Guangshu LI, Huijun KANG, Tongmin WANG. Influence of Al Doping on Thermoelectric Properties of CuInTe₂[J]. Acta Metall Sin, 2026, 62(6): 1137-1146.

全文: PDF(3724 KB) HTML

摘要:

CuInTe₂的弱电导率和相对高的晶格热导率导致其较低的热电优值(ZT值)和转换效率，从而阻碍了其在热电领域的商业化应用。本工作通过固态反应和热压烧结法制备了一系列Al掺杂的CuIn_1-_xAl_xTe₂化合物，研究了Al掺杂量对微观结构和热电性能的影响。结果表明，Al掺杂明显增大了载流子浓度，从而提升了电性能。同时，Al掺杂引入了取代型点缺陷、位错、应变波动和CuInAl₄Te₈纳米析出相，抑制了声子运输，从而实现晶格热导率的下降。最终，在823 K时，CuIn_0.8Al_0.2Te₂达到最小晶格热导率(0.72 W/(m·K))，同时达到ZT值峰值(0.88)，比基体提升了115%。CuIn_0.8Al_0.2Te₂在323~823和523~823 K间的平均ZT值分别为0.34和0.60，分别比基体增加了127%和122%。CuIn_1-_xAl_xTe₂化合物ZT值和平均ZT值的明显提升表明了CuInTe₂ In位掺杂的有效性。

关键词 ： CuInTe₂, 热电材料, 掺杂, Seebeck系数

Abstract：

The low electrical conductivity exhibited by CuInTe₂, coupled with its relatively high lattice thermal conductivity, results in a suboptimal thermoelectric figure of merit (ZT) and conversion efficiency, thereby hindering its potential for commercial application in the field of thermoelectricity. A series of Al-doped CuInTe₂ compounds were successfully prepared using solid-state reaction and spark plasma sintering techniques in this study. The influence of aluminum doping on the structure and thermoelectric performance was systematically investigated. Al doping remarkably enhances electrical transport performance by increasing carrier concentration. Meanwhile, Al doping induces substitutional point defects, dislocations, strain fluctuations, and nanoprecipitations of CuInAl₄Te₈, which act as additional barriers to phonon transport, leading to a reduction in the lattice thermal conductivity. Consequently, a minimum lattice thermal conductivity of 0.72 W/(m·K) at 823 K was obtained for CuIn_0.8Al_0.2Te₂ sample, and a maximum ZT value of 0.88, an enhancement of 115% than pristine CuInTe₂. The average ZT values at 323-823 K and 523-823 K were 0.34 and 0.60, respectively, representing approximately 127% and 122% compared with pristine CuInTe₂. The remarkable enhancement of ZT and average ZT values for CuIn_1-_xAl_xTe₂ compounds demonstrates the efficacy of In-site doping in CuInTe₂.

Key words： CuInTe₂ thermoelectric materials doping Seebeck coefficient

收稿日期: 2025-09-16

ZTFLH:

TM913

基金资助:国家自然科学基金项目(52271025);国家自然科学基金项目(51927801);国家自然科学基金项目(U22A20174);辽宁省科技计划项目(2023JH2/101700295);大连科技创新项目(2023JJ12GX021);克拉玛依市创新杰出青年人才项目(XQZX20230103)

通讯作者: 康慧君，kanghuijun@dlut.edu.cn，主要从事热电材料和铜合金研究；
王同敏，tmwang@dlut.edu.cn，主要从事有色金属及其复合材料、热电功能材料、高熵合金研究
杨二阔，yangerkuo@cupk.edu.cn，主要从事机器学习和热电材料研究

Corresponding author: KANG Huijun, professor, Tel: (0411)84709500, E-mail: kanghuijun@dlut.edu.cn;
WANG Tongmin, professor, Tel: (0411)84706790, E-mail: tmwang@dlut.edu.cn;
YANG Erkuo, Tel: (0990)6633320, E-mail: yangerkuo@cupk.edu.cn

作者简介: 杨二阔，男，1994年生，博士

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https://www.ams.org.cn/CN/10.11900/0412.1961.2025.00269 或 https://www.ams.org.cn/CN/Y2026/V62/I6/1137

图1 元素周期表中CuInTe2的掺杂元素

图2 CuIn1-xAlxTe2 (x = 0、0.01、0.03、0.1、0.2、0.3和0.5)粉末在303 K的XRD谱和(220)峰放大图

图3 CuIn0.97Al0.03Te2样品纵截面和横截面的SEM像及EDS元素面分布图

图4 CuIn0.8Al0.2Te2样品的SEM像及EDS元素面分布图

图5 纳米析出相及其与CuInTe2间界面的TEM表征

图6 CuIn1-xAlxTe2 (x = 0、0.01、0.03、0.1、0.2和0.3)化合物的电输运性能

图7 CuIn1-xAlxTe2 (x = 0、0.01、0.03、0.1、0.2和0.3)化合物的热运输性能及与其他热电材料[16,20,21,30,36,40~45]的对比

表1 CuIn1-xAlxTe2 (x = 0.01、0.03、0.1、0.2和0.3)的质量场波动、应变场波动和总散射参数

图8 CuIn1-xAlxTe2 (x = 0、0.01、0.03、0.1、0.2和0.3)化合物的热电优值

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