低成本掺杂剂明显提升CuInTe2的热电性能

doi:10.11900/0412.1961.2025.00269

金属学报 DOI: 10.11900/0412.1961.2025.00269

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杨二阔¹ 张泽宇¹ 王亚松¹ 彭威¹ 历长云¹ 李广书² 康慧君² 王同敏²

1 中国石油大学(北京)克拉玛依校区工学院克拉玛依 834000

2 大连理工大学材料科学与工程学院辽宁省凝固控制与数字化制备技术重点实验室大连 116024

Low-cost dopants boosting the thermoelectric properties of CuInTe2

YANG Erkuo ¹, ZHANG Zeyu ¹, WANG Yasong ¹, PENG Wei ¹, LI Changyun ¹, LI Guangshu ¹, KANG Huijun ², WANG Tongmin ²

1 School of Engineering, China University of Petroleum-Beijing at Karamay, Karamay 834000, China 2 Key Laboratory of Solidification Control and Digital Preparation Technology (Liaoning Province), School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China

引用本文:

杨二阔, 张泽宇, 王亚松, 彭威, 历长云, 李广书, 康慧君, 王同敏. 低成本掺杂剂明显提升CuInTe2的热电性能[J]. 金属学报, DOI: 10.11900/0412.1961.2025.00269.

全文: PDF(2340 KB)

摘要: CuInTe₂的弱电导率和相对高的晶格热导率导致其较低的热电优值(ZT值)和转换效率，从而阻碍了其在热电领域的商业化应用。本工作通过固态反应和热压烧结法制备了一系列Al掺杂的CuIn₁_{- x}Al_xTe₂化合物并研究了Al掺杂量对微观结构和热电性能的影响。结果表明，Al掺杂明显增大了载流子浓度，从而提升了电性能。同时，Al掺杂引入了取代型点缺陷、位错、应变波动和CuInAl₄Te₈纳米析出相，抑制了声子运输从而实现晶格热导率的下降。最终，在823 K时，CuIn_0.8Al_0.2Te₂达到最小晶格热导率，为0.72 W/(m×K)，同时达到ZT值峰值(0.88)，比基体提升了115%。CuIn_0.8Al_0.2Te₂在323~823 K和523~823 K间的平均ZT值分别为0.34和0.6，比基体增加了2倍。CuIn₁_{- x}Al_xTe₂化合物ZT值和平均ZT值的明显提升表明了CuInTe₂的In位掺杂的有效性。

关键词 ： CuInTe2,, 热电材料, 掺杂, Seebeck系数

Abstract：CuInTe2, can be regarded as two cubic ZnTe stacked on top of each other, with Cu and In atoms alternately replaced Zn atoms to form a crystal structure with short-range disorder and long-rang order. This gives it a lower thermal conductivity than ZnTe, making it a promising P-type thermoelectric material. The weak electrical conductivity and relatively high inherent lattice thermal conductivity of CuInTe2 induce the low ZT and conversion efficiency of harvesting waste heat, and thus hinder commercial application in thermoelectricity field. A series of Al-doped CuInTe2 compounds were prepared successfully by solid reaction, annealing, and spark plasma sintering techniques and the influence of aluminum doping on the structure and thermoelectric performance was systematically explored through multiple advanced characterization methods. Al doping remarkably improves electrical transport performance by modulating carrier concentration and mobility, remarkably regulates electrical transport performance. Meanwhile, Al doping induces the substituted point-defects, dislocation, strain fluctuation and nano precipitations of CuInAl4Te8 as extra barriers, inhibiting the phonon transport and thus achieving the reduction of ?L so that minimum lattice thermal conductivity of 0.72 W?m-1?K-1 at 823 K are obtained for x=0.2 sample. Eventually, an optimized ZT value of 0.88 is achieved for CuIn0.8Al0.2Te2 at 823 K with an enhancement of 115%. And ZTavg (323-823 K) value of 0.34 and ZTavg (523-823K) value of 0.6 are obtained, respectively, with about double enhancement, compared to that of pristine CuInTe2. This work proves the effective utilization of doping at In sites of CuInTe2 and advance the development of the chalcopyrite thermoelectric materials with diamond-like structure.

Key words： CuInTe2, thermoelectric materials, doping, Seebeck

收稿日期: 2025-09-16

基金资助:国家自然科学基金项目(52271025); 国家自然科学基金项目(51927801); 国家自然科学基金项目(U22A20174); 辽宁省科技计划项目(2023JH2/101700295); 大连科技创新项目(2023JJ12GX021); 克拉玛依市创新杰出青年人才项目(XQZX20230103)

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https://www.ams.org.cn/CN/Y0/V/I/0

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