Sn/Cu互连体系界面金属间化合物Cu6Sn5演化和生长动力学的相场法模拟*

doi:10.3724/SP.J.1037.2013.00415

金属学报

2014, Vol. 50

Issue (3): 294-304 DOI: 10.3724/SP.J.1037.2013.00415

本期目录 | 过刊浏览

Sn/Cu互连体系界面金属间化合物Cu₆Sn₅演化和生长动力学的相场法模拟^*

柯常波^1,²(

), 周敏波², 张新平²

1 华南理工大学机械与汽车工程学院, 广州 510640
2 华南理工大学材料科学与工程学院, 广州 510640

PHASE FIELD SIMULATION ON MICROSTRUCTURE EVOLUTION AND GROWTH KINETICS OF Cu₆Sn₅ INTERMETALLIC COMPOUND DURING EARLY INTERFACIAL REACTION IN Sn/Cu SOLDERING SYSTEM

KE Changbo^1,²(

), ZHOU Minbo², ZHANG Xinping²

1 School of Mechanical and Automotive Engineering, South China University of Technology, Guangzhou 510640
2 School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640

引用本文:

柯常波, 周敏波, 张新平. Sn/Cu互连体系界面金属间化合物Cu₆Sn₅演化和生长动力学的相场法模拟^*[J]. 金属学报, 2014, 50(3): 294-304.
Changbo KE, Minbo ZHOU, Xinping ZHANG. PHASE FIELD SIMULATION ON MICROSTRUCTURE EVOLUTION AND GROWTH KINETICS OF Cu₆Sn₅ INTERMETALLIC COMPOUND DURING EARLY INTERFACIAL REACTION IN Sn/Cu SOLDERING SYSTEM[J]. Acta Metall Sin, 2014, 50(3): 294-304.

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摘要:

运用多相场模型模拟了Sn/Cu互连体系中晶界扩散系数 $D G B$ 及界面初生金属间化合物(IMC)相( $η$ 相)与液相Sn(L相)间界面能 $σ η L$ 对界面Cu₆Sn₅组织演化和生长动力学行为的影响. 研究表明, 界面IMC层Cu₆Sn₅晶粒以紧密排列的扇贝状形貌存在, 其扇贝状形貌同时受 $D G B$ 和 $σ η L$ 的竞争性影响. IMC的生长过程由3阶段组成: Cu₆Sn₅晶粒快速生长铺满Cu基底阶段、Cu₆Sn₅晶粒转变为扇贝状形貌的过渡阶段以及Cu₆Sn₅层增厚和晶粒粗化同时进行的正常生长阶段. IMC层厚度随 $D G B$ 增大而增加, 随 $σ η L$ 增大而减小; 而Cu₆Sn₅晶粒的平均横向粒径随 $D G B$ 增大而减小, 随 $σ η L$ 增大而增加. 界面Cu₆Sn₅层厚度和晶粒横向粒径随反应时间呈指数规律变化, 采用较大 $D G B$ 和晶界能 $σ G B = 2 σ η L$ 获得的生长指数符合理想的固/液界面反应的生长过程.

关键词 ：金属间化合物, 生长动力学, 组织演化, 界面反应, 相场模拟

Abstract：

In the continuous pursuit of miniaturization, multifunction and high-reliability of electronic products and devices, the packing density has been increasing and the dimension of solder joints has been scaling down. In electronic packaging, during the soldering process being employed to Sn-based solders, an intermetallic compound (IMC) layer is formed between molten solder and pad (or under bump metallization, UBM), whose morphology and thickness as well as growth kinetics play an important role in controlling the service performance of the solder joints, in particular for solder interconnects with the decreasing size where the interfacial IMC layer takes up a high volume fraction in the solder joint. Thus, characterizing the morphology change and growth kinetics of interfacial IMC layer is very important to optimize the soldering process and evaluate the reliability of solder interconnects. In this study, a multi-phase-field model is applied to intensively account for the effect of grain boundary diffusion coefficient ( $D G B$ ) and IMC/liquid interfacial energy $σ η L$ on the morphology evolution and and growth kinetics of IMC. The simulation results show that Cu₆Sn₅ grains grow up and contact with each other exhibiting a scallop-like morphology which can be influenced by both the grain boundary diffusion coefficient and IMC/liquid interfacial energy. The IMC growth process exhibits three stages, including the initial stage associated with Cu₆Sn₅ grain broadening followed by the transition stage characterized by scallop shape formation and the last normal growth stage dominated by IMC layer thickening and concurrent Cu₆Sn₅ grain coarsening. It is also found that the IMC layer thickness increases with grain boundary diffusion coefficient but decreases with IMC/liquid interfacial energy, while the scallop average width decreases with grain boundary diffusion coefficient and increases with IMC/liquid interfacial energy. The relationships between IMC layer thickness/width and reaction time can be well fitted by an exponential growth law, in which the large grain boundary diffusion coefficient combined with $σ G B = 2 σ η L$ (where $σ G B$ is the grain boundary energy) can produce precise growth exponent closing to that in the ideal solid-liquid interface reaction.

Key words： intermetallic compound growth kinetics morphological evolution interfacial reaction phase field simulation

收稿日期: 2013-07-16

ZTFLH:

TG113

基金资助:*国家自然科学基金项目51275178和51205135, 高等学校博士点科研基金项目20110172110003以及中央高校基本科研业务费项目2013ZM0026资助

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https://www.ams.org.cn/CN/10.3724/SP.J.1037.2013.00415 或 https://www.ams.org.cn/CN/Y2014/V50/I3/294

图1

表1 模拟所用的材料属性参数

图2

图3 不同晶界扩散系数(DGB) 下的IMC组织形貌

图4 不同DGB时IMC层厚度和Cu6Sn5扇贝状晶粒的平均横向粒径随时间的变化关系

图5 不同DGB下正常生长阶段IMC厚度与界面反应时间的指数拟合结果

$D G B$	IMC layer thickness			Scallop average width
$D G B$	$K T$	$n T$	R²	K_W	n_W	R²
2.0×10³D_η	35.44	0.35	0.998	23.16	0.32	0.997
2.0×10²D_η	28.80	0.37	0.997	25.54	0.27	0.991
D_η	22.52	0.40	0.991	16.27	0.48	0.989

表2 不同DGB下正常生长阶段IMC层厚度和晶粒横向粒径随时间变化的指数拟合结果

图 6. 不同 η / L 界面能下IMC的组织形貌

图7 不同 σ η L 下IMC厚度和Cu6Sn5扇贝状晶粒平均横向粒径随时间的变化关系

σ_ηL/ J/m²	IMC layer thickness			Average width of Cu₆Sn₅ grain
σ_ηL/ J/m²	$K T$	$n T$	R²	K_W	n_W	R²
0.24	25.76	0.36	0.994	26.32	0.19	0.998
0.15	35.44	0.35	0.998	23.16	0.32	0.997
0.08	36.83	0.42	0.997	27.76	0.23	0.998

表3 不同 σ η L 时正常生长阶段IMC层厚度和晶粒横向粒径与时间的指数拟合结果

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