A FORMATION MODEL AND SIMULATION OF MICROSTRUCTURE OF SEMI--SOLID METALS
WU Shusen; WU Xueping; XIAO Zehui; LI Dongnan; LUO Jirong
State Key Lab of Mould & Dies Technology; Huazhong University of Science and Technology; Wuhan 430074
Cite this article:
WU Shusen; WU Xueping; XIAO Zehui; LI Dongnan; LUO Jirong. A FORMATION MODEL AND SIMULATION OF MICROSTRUCTURE OF SEMI--SOLID METALS. Acta Metall Sin, 2004, 40(4): 429-433 .
Abstract The concentration field and temperature field of solidifying crystals
in the processing of semi--solid metals were analysed under stirring
condition. By using solidification velocity and flow speed of
the melt as variations of affecting the shape of crystals, a shape
determination model for grain growth was developed under the condition
of moving liquid. The morphologies of grain growth under different
conditions of semi--solid processing were simulated. The simulation
results are in accord with the experimental results.
[1] Flemings M C. Metall Trans, 1991; 22A: 957 [2] Kirkwood D K. Inter Mater Rev, 1994: 173 [3] Doherty R D, Lee H I, Feest E A. Mater Sci Eng, 1984;A65: 181 [4] Zhang J X, Zhang K, Liu G J, Xu J, Shi L K. The ChineseJ Nonferrous Metals, 2000; 10: 511(张景新,张 奎,刘国钧,徐骏,石力开.中国有色金属学报,2000;10(4) :511) [5] Li T, Huang W D, Lin X. The Chinese J Nonferrous Metals, 2000; 10: 635(李 涛,黄卫东,林 鑫.中国有色金属学报, 2000;10(5) :635) [6] Wu S S, Li D N, Mao Y W, Song X J, Wu G Z, Luo J J. Foundry, 2002; 51: 583(吴树森,李东南,毛有武,宋象军,吴广忠,罗吉荣.铸造,2002;51:583) [7] Perez M, Barbe J C, Neda Z, Brechet Y, Salvo L. ActaMater, 2000; 48: 3773 [8] Niroumand B, Xia K. Mater Sci Eng, 2000; A283: 70 [9] Kurz W, Fisher D J. Fundamentals of Solidification,Switzerland: Trans Tech Publications LTD, 1986: 163 [10] Rappaz M, Thevoz P H. Acta Metall, 1987; 35: 1487 [11] Rappaz M, Thevoz P H. Acta Metall, 1987; 35: 2929 [12] Wu S S, Luo J J, Mao Y W, Song X J, Xiao Z H. Proc of the 7th Inter Conf on Semi-Solid Processing of Alloys and Composites, Tsukuba, Japan, 2002: 843 [13] Li D N, Luo J J, Wu S S, Xiao Z H, Mao Y W. J Mater Processing Technol, 2002; 129: 431
