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MICROSTRUCTURE OF SILICON CARBIDE WHISKER |
XU Haigang;ZHU Jing;YUAN Hong;NING Xiaoguang;YE Hengqiang Central Iron and Steel Research Institute; Ministry of Metallurgical Industry; Beijing; Laboratory of Atomic Imaging of Solids; Institute of Metal Research; Academia Sinica; Shenyang |
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Cite this article:
XU Haigang;ZHU Jing;YUAN Hong;NING Xiaoguang;YE Hengqiang Central Iron and Steel Research Institute; Ministry of Metallurgical Industry; Beijing; Laboratory of Atomic Imaging of Solids; Institute of Metal Research; Academia Sinica; Shenyang. MICROSTRUCTURE OF SILICON CARBIDE WHISKER. Acta Metall Sin, 1990, 26(6): 137-144.
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Abstract The morphology, crystal defects and chemical compositions of surfacesin two kinds of SiC whiskers related to their growth mechanism have been studiedby means of electron microscopy and surface chemical analysis. Based upon the expe-rimental results, five criteria for evaluating the whisker microstructure were sugge-sted as: proportion of the perfect single crystals, morphology and dimensions, defectsand their distribution, the bulk and surface chemistries, and crystallographic charac-ters.
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Received: 18 June 1990
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