1 School of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, China 2 School of Materials Science and Engineering, Fujian University of Technology, Fuzhou 350118, China
Cite this article:
Jixiang CHEN,Weiguo WANG,Yan LIN,Chen LIN,Qianting WANG,Pinqiang DAI. GRAIN BOUNDARY PLANE DISTRIBUTIONS IN RECRYSTALLIZED HIGH PURITY Al AFTER A PARALLEL PROCESSING OF EQUAL CHANNEL ANGULAR PRESSING AND DIRECT ROLLING. Acta Metall Sin, 2016, 52(4): 473-483.
It is quite different from those low to medium stacking fault energy face-centered cubic metals, Al and most its alloys are not applicable to twin-induced grain boundary engineering processing due to their high stacking fault energy. In order to optimize the grain boundary character distribution so as to remarkably better the properties of Al and its alloys, it is necessary at first to study the grain boundary plane distributions. In this work, two parallel high purity (99.99%) Al specimens, which were prepared by multi-directional forging followed by recrystallization annealing resulting in a homogeneous microstructure with averaged grain size around 20 μm, were separately processed by equal channel angular pressing (ECAP) and direct rolling (DR) with true strain ε≈2 followed by a recrystallization annealing at 360 ℃ for 8~90 min. Then, the grain boundary plane distributions were characterized by five-parameter analysis (FPA) based on stereology method and electron backscatter diffraction (EBSD). The results show that the grain boundary planes of the specimens as processed mainly orient on {111}, mostly corresponding to the <111> twist high angle boundaries. It is due to the energy minimum of {111}. The primary difference of grain boundary plane distributions between ECAP and DR specimens lies in the behaviors of grain boundary planes orienting onto {111}. For ECAP specimens, it is slow the grain boundary planes orienting onto {111}. However, for DR specimens, it is quite easy the grain boundary planes orienting onto {111}. Discussions pointed out, compared with ECAP deformation, DR deformation is more efficient for grain boundary plane orienting onto {111} in the subsequent recrystallization annealing and thus is more in favor of the optimization of grain boundary character distribution. It could be attributed to the development of <110>//ND textures during DR deformation which results in the fast grain growth in the subsequent recrystallization annealing.
Fig.1 Orientation image microscopy (OIM) of high purity Al before equal channel angular pressing (ECAP) and direct rolling (DR)
Fig.2 Schematic of ECAP (ND—normal direction, ED—extruded direction, TD—transverse direction)
Fig.3 OIMs (a, c) and band contrast (BC) map (b) of high purity Al annealed at 360 ℃ for 8 min (a, b) and 90 min (c) after ECAP
Fig.4 OIMs (a, c) and BC map (b) of high purity Al annealed at 360 ℃ for 8 min (a, b) and 90 min (c) after DR
Fig.5 XRD spectra of high purity Al after ECAP and DR
Fig.6 Curves of grain size vs annealing time for ECAP and DR high purity Al during annealing at 360 ℃
Fig.7 Orientation distribution function (ODF) sections of high purity Al annealed at 360 ℃ for 8 min (a, c) and 90 min (b, d) after ECAP (a, b) and DR (c, d) (?1, Φ and ?2 are the three Euler angles presenting crystallographic orientation in the specimen reference frame)
Fig.8 Misorientation distributions of high purity Al annealed at 360 ℃ for 8 min (a, c) and 90 min (b, d) after ECAP (a, b) and DR (c, d)
Fig.9 Grain boundary plane distributions of high purity Al annealed at 360 ℃ for 8 min (a, c) and 90 min (b, d) after ECAP (a, b) and DR (c, d) (Plotted in stereographic projection along [001]. The spreading of intensity away from the ideal <111> position is shown by the red circles. MRD—multiple of random distribution)
Fig.10 Grain boundary plane distributions for [111]/50° mis-oriented high angle grain boundaries of high purity Al annealed at 360 ℃ for 8 min (a, c) and 90 min (b, d) after ECAP (a, b) and DR (c, d)
Fig.11 Grain boundary plane distributions for [111]/10° mis-oriented low angle grain boundaries of high purity Al annealed at 360 ℃ for 8 min (a, c) and 90 min (b, d) after ECAP (a, b) and DR (c, d)
Fig.12 CSL grain boundary distributions of high purity Al annealed at 360 ℃ for 8 and 90 min after ECAP (a) and DR (b)
Fig.13 CSL grain boundary plane distributions of high purity Al annealed at 360 ℃ for 8 min (a~c) and 90 min (d~f) after ECAP
Fig.14 CSL grain boundary plane distributions of high purity Al annealed at 360 ℃ for 8 min (a~c) and 90 min (d~f) after DR
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