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THE INSPECTION OF DEFECTS IN METAL OXIDE FILMS BY CPCD AND LIQUID CRYSTAL METHODS |
YIN Renhe; CAO Weimin; LI Yajun(The Electrochemical Research Center; ShanghaiUniversity; Shanghai 201800) LI Zhuotang (Deportment of Materials; Shanghai University)) RONG Guobin (East China University of Science and Technology) |
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Cite this article:
YIN Renhe; CAO Weimin; LI Yajun(The Electrochemical Research Center; ShanghaiUniversity; Shanghai 201800) LI Zhuotang (Deportment of Materials; Shanghai University)) RONG Guobin (East China University of Science and Technology). THE INSPECTION OF DEFECTS IN METAL OXIDE FILMS BY CPCD AND LIQUID CRYSTAL METHODS. Acta Metall Sin, 1997, 33(6): 667-672.
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Abstract The defects in Ta2O5 and ZrO2 films prepared by RF sputtering on SUS304stainless steel were studied by CPCD (critical passivation current density) and liquid crystalmethods. In CPCD method a relation between current density if and film thickness wasgiven: If= K(1-0)d. Using DSM (dynamic scattering mode) of liquid crystal, a new methodabout nondestructive testing of film defects was reported. The results of the two methodsshowed a good linear relation.
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Received: 18 June 1997
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1印仁和,谷口成史,林安德.中国科学技术大学学报,1994:24:252 2 Natishan P M,Cafferty E M,Hubler G K.J Electro-chem Soc、1988;135:321 3杉本克久,林安德,相马才晃,原信义.气相铁钢表面高机能化.东京:日本铁钢协会1995:45 4Keen J M Electronics Lett, 1971; 7: 433? |
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