高熵合金中的局域化学有序

doi:10.11900/0412.1961.2020.00513

金属学报

2021, Vol. 57

Issue (4): 413-424 DOI: 10.11900/0412.1961.2020.00513

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高熵合金中的局域化学有序

丁俊(

), 王章洁(

)

西安交通大学材料科学与工程学院金属材料强度国家重点实验室西安 710049

Local Chemical Order in High-Entropy Alloys

DING Jun(

), WANG Zhangjie(

)

State Key Laboratory of Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China

引用本文:

丁俊, 王章洁. 高熵合金中的局域化学有序[J]. 金属学报, 2021, 57(4): 413-424.
Jun DING, Zhangjie WANG. Local Chemical Order in High-Entropy Alloys[J]. Acta Metall Sin, 2021, 57(4): 413-424.

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摘要:

高熵合金以其多主组元、高构型熵的设计理念以及优异的性能(例如高强高韧、耐高温和耐辐照等)具有广阔的应用前景，成为近十多年来合金领域内的热点高性能结构材料。从首次发现至今，大多数研究基于经典的理想固溶体假设，然而最新的实验与计算结果显示高熵合金具有局域化学有序，并且会对力学性能产生一定的影响，相关研究在领域内引起了广泛的关注，成为新的研究热点。本文主要综述了高熵合金中局域化学有序的理论描述、实验表征及其对力学性能的影响，并简单展望了在原子尺度上数值化表征并调控局域化学有序，从而实现高熵合金性能优化的可能性和潜在优势。

关键词 ：高熵合金, 局域化学有序, 力学性能

Abstract：

High-entropy alloys are designed based on the concept of multi-principle elements and high-configuration entropy. They exhibit excellent mechanical, high-temperature, and irradiation-tolerant properties, indicating their great potential for high-performance structural materials in the recent decade. Since the discovery of high-entropy alloys, most of the related research work was based on the classical assumption of ideal solid solution. However, recent investigation have showed the local chemical order in high-entropy alloys and how such atomic-level structure tunes the deformation mechanism, which has attracted significant attention. This study reviewed the recent progress in the theoretical description and experimental characterization of the local chemical order as well as its impact on the mechanical properties of high-entropy alloys. Besides, a brief perspective on the research of understanding and optimizing high-entropy alloys from the local chemical order is proposed.

Key words： high-entropy alloy local chemical order mechanical property

收稿日期: 2020-12-21

ZTFLH:

TG139

基金资助:国家自然科学基金项目(51971167);国家级青年人才计划

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图1 高熵合金、非晶合金与传统合金的局域结构示意图[43]

图2 高熵合金中典型原子尺度结构的示意图

图3 透射电子显微镜电子衍射与暗场像表征高熵合金中局域化学有序[48,58](a) energy-filtered diffraction patterns for aged CrCoNi samples at 1000oC[48](b) energy-filtered dark-field image from diffuse superlattice peaks (short-range order (SRO)-enhanced domains are marked by arrows)[48](c) the histogram of identified SRO domain diameters[48] (dˉ and σ are the average diameter and its standard deviation of domains, respectively)(d) SAED pattern indexed as [1ˉ12]/2 showing the local chemical ordering (LCO)-generated reflections (yellow circle)[58](e) direct visualization of LCO domains by DF-TEM analysis[58](f) size distribution of the LCO domains that appear outside planar slip bands (left) and at planar slip bands (right)[58]

图4 局域化学有序对CrCoNi合金层错能的影响[43,48](a) atomic configuration of stacking fault in CrCoNi alloy[43](b) the distribution of stacking fault energies (γisf) in CrCoNi alloys with a variety of local chemical order (from random solid solution CH_0, to the highest degree, CH_F), measured by DFT (density function theory) calculation[43](c) low angle annular dark field (LAADF) images showing dislocation dissociations in water-quenched and 1000oC aged samples, respectively[48](d) distribution of the measured separation of partial dislocation pairs from both water-quenched and 1000oC aged samples[48]

图5 高熵合金与局域化学有序相关的位错行为[48](a) water-quenched (b) aged at 1000oC

图6 CoCrFeMnNi块体多晶试样变应变速率拉伸测试[77](a) tensile true stress and true strain(b) strain-dependent activation volume of dislocation slip (b—module of Burgers vector)

图7 局域化学有序的强化效应[44](a) correlation between nanoscale segment detrapping events and spatial deviations from chemical disorder (Atoms are colored according to the coarse-grained αCoCr1; darker color means stronger Co-Cr short-range-order (more negative αCoCr1); the dislocation is outlined in blue and its swept area are outlined in green)(b) LCO-induced strengthening (The average activation barriers, activation volume as well as activation stress associated with the nanoscale segment detrapping process; RSS is for random solid solution and Ta represents the temperature for Monte Carlo simulation)

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