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Si对热浸镀Al界面化合物层生长的限制作用 |
钱卫江;顾文桂 |
上海钢铁研究所;上海钢铁研究所应用基础部 |
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INHIBITORY ACTION OF Si ON GROWTH OF INTERFACIAL COMPOUND LAYER DURING HOT-DIP ALUMINIZING |
QIAN Weijiang;GU Wengui(Shanghai Iron and Steel Research Institute) |
引用本文:
钱卫江;顾文桂. Si对热浸镀Al界面化合物层生长的限制作用[J]. 金属学报, 1994, 30(21): 403-406.
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INHIBITORY ACTION OF Si ON GROWTH OF INTERFACIAL COMPOUND LAYER DURING HOT-DIP ALUMINIZING[J]. Acta Metall Sin, 1994, 30(21): 403-406.
1顾国成,刘邦津.热浸镀.北京:化学工业出版社出版,1988.122刘邦津,吴凤珍.钢铁,1991;26:423NichollsJE.CorrTechnol.1964;11:164EggelerG,VogelH,FriedrichJ,KaescheH.ParketMetallogr,1985;22:1625LainerDI,KurakinAK.FizMetMetallov,1964;18:1456KomatsuN,NakamureM,FujitaH.JJphInstMet,1981;45:4167JonesRD,DennerSG.In:MetalFinishingSocietyofJapan,Proceedignsofthe10thWorldCongressinMetalFinishing,Kyoto,19808EggelerG,AuerW,KaescheH.JMaterialsScience,1986;21:3348 |
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