Abstract Al-doped zinc oxide (ZAO) thin films were prepared by middle-frequency
alternative magnetron sputtering with ZAO (ZnO+2%Al2O3)
ceramic target. IR (infrared reflection) spectrometry was
used to examine infrared reflection
properties. The influences of film thickness, substrate
temperature and argon gas pressure on the performances of
ZAO thin films were investigated. The
technical parameters for depositing ZAO
films with high infrared reflection were determined.
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