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Infrared properties and mechanism of Al-doped ZnO thin films |
FU Engang; ZHUANG Daming; ZHANG Gong |
Department of Mechanical Engineering; Tsinghua University; Beijing 100084;Department of Physics; The University of Hong Kong; Hong Kong |
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Cite this article:
FU Engang; ZHUANG Daming; ZHANG Gong. Infrared properties and mechanism of Al-doped ZnO thin films. Acta Metall Sin, 2005, 41(3): 333-336 .
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Abstract Al-doped zinc oxide (ZAO) thin films were prepared by middle-frequency
alternative magnetron sputtering with ZAO (ZnO+2%Al2O3)
ceramic target. IR (infrared reflection) spectrometry was
used to examine infrared reflection
properties. The influences of film thickness, substrate
temperature and argon gas pressure on the performances of
ZAO thin films were investigated. The
technical parameters for depositing ZAO
films with high infrared reflection were determined.
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Received: 23 April 2004
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