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Acta Metall Sin  2005, Vol. 41 Issue (3): 333-336     DOI:
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Infrared properties and mechanism of Al-doped ZnO thin films
FU Engang; ZHUANG Daming; ZHANG Gong
Department of Mechanical Engineering; Tsinghua University; Beijing 100084;Department of Physics; The University of Hong Kong; Hong Kong
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FU Engang; ZHUANG Daming; ZHANG Gong. Infrared properties and mechanism of Al-doped ZnO thin films. Acta Metall Sin, 2005, 41(3): 333-336 .

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Abstract  Al-doped zinc oxide (ZAO) thin films were prepared by middle-frequency alternative magnetron sputtering with ZAO (ZnO+2%Al2O3) ceramic target. IR (infrared reflection) spectrometry was used to examine infrared reflection properties. The influences of film thickness, substrate temperature and argon gas pressure on the performances of ZAO thin films were investigated. The technical parameters for depositing ZAO films with high infrared reflection were determined.
Key words:  magnetron sputtering      ZAO thin film      infrared reflection      
Received:  23 April 2004     
ZTFLH:  O484.4  

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https://www.ams.org.cn/EN/     OR     https://www.ams.org.cn/EN/Y2005/V41/I3/333

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