Infrared properties and mechanism of Al-doped ZnO thin films

Acta Metall Sin

2005, Vol. 41

Issue (3): 333-336 DOI:

Research Articles

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Infrared properties and mechanism of Al-doped ZnO thin films

FU Engang; ZHUANG Daming; ZHANG Gong

Department of Mechanical Engineering; Tsinghua University; Beijing 100084；Department of Physics; The University of Hong Kong; Hong Kong

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FU Engang; ZHUANG Daming; ZHANG Gong. Infrared properties and mechanism of Al-doped ZnO thin films. Acta Metall Sin, 2005, 41(3): 333-336 .

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Abstract Al-doped zinc oxide (ZAO) thin films were prepared by middle-frequency alternative magnetron sputtering with ZAO (ZnO+2%Al2O3) ceramic target. IR (infrared reflection) spectrometry was used to examine infrared reflection properties. The influences of film thickness, substrate temperature and argon gas pressure on the performances of ZAO thin films were investigated. The technical parameters for depositing ZAO films with high infrared reflection were determined.

Key words: magnetron sputtering ZAO thin film infrared reflection

Received: 23 April 2004

ZTFLH:

O484.4

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	FU Engang
	ZHUANG Daming
	ZHANG Gong

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https://www.ams.org.cn/EN/ OR https://www.ams.org.cn/EN/Y2005/V41/I3/333

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