Orientation Selection Behavior During Secondary Recrystallization in Grain-Oriented Silicon Steel

doi:10.11900/0412.1961.2019.00435

Acta Metall Sin

2020, Vol. 56

Issue (8): 1067-1074 DOI: 10.11900/0412.1961.2019.00435

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Orientation Selection Behavior During Secondary Recrystallization in Grain-Oriented Silicon Steel

XU Zhanyi¹, SHA Yuhui¹(

), ZHANG Fang¹, ZHANG Huabing², LI Guobao², CHU Shuangjie², ZUO Liang¹^,³

1 Key Laboratory for Anisotropy and Texture of Materials, Ministry of Education, Northeastern University, Shenyang 110819, China
2 Baoshan Iron & Steel Cooperation Limited, Shanghai 201900, China
3 Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China

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XU Zhanyi, SHA Yuhui, ZHANG Fang, ZHANG Huabing, LI Guobao, CHU Shuangjie, ZUO Liang. Orientation Selection Behavior During Secondary Recrystallization in Grain-Oriented Silicon Steel. Acta Metall Sin, 2020, 56(8): 1067-1074.

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Abstract

The key index of grain-oriented silicon steel is the sharpness of secondary recrystallization Goss ({110}<001>) texture, which is determined by the matrix grain size distribution, texture environment and inhibitor level. In the widely used low-temperature slab heating process in virtue of high efficiency and low-cost manufacturing, the instability of inhibitor and the enlarged matrix grain size distribution seriously restrict the occurrence of secondary recrystallization and the sharpness of Goss texture. The investigation on orientation selection behavior during abnormal grain growth can explore the potential routines to solve the problem. In this work, the evolution process of secondary recrystallization texture in grain-oriented silicon steel has been studied by both experiment and calculation. It is found that single Goss texture is finally obtained by means of continuous orientation selection during secondary recrystallization. The kinetic model for secondary recrystallization, introduced with orientation-dependent relative grain boundary energy coefficient, can describe quantitatively the difference in growth rate between Goss grains with various deviation angles and non-Goss grains. The combined effects of grain size distribution, grain boundary characteristic between Goss and matrix grains, together with inhibition force level on orientation selection behavior are analyzed. Accordingly, a multi-parameter matching method for promoting the advantage of Goss grains in orientation selection is proposed.

Key words: grain-oriented silicon steel secondary recrystallization texture inhibition force grain size

Received: 17 December 2019

ZTFLH:

TG142.77

Fund: National Key Research and Development Program of China(2016YFB0300305);National Natural Science Foundation of China(51671049);National Natural Science Foundation of China(51931002)

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	Zhanyi XU
	Yuhui SHA
	Fang ZHANG
	Huabing ZHANG
	Guobao LI
	Shuangjie CHU
	Liang ZUO

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https://www.ams.org.cn/EN/10.11900/0412.1961.2019.00435 OR https://www.ams.org.cn/EN/Y2020/V56/I8/1067

Fig.1 Grain size distributions of matrix and Goss grains in Fe-3.25%Si grain-oriented silicon steel after primary recrystallization (a) and at the beginning of secondary recrystallization (b)

Fig.2 φ₂=45° section of ODF (levels: 1, 2, 3?) (a), number fraction of several main texture components (b) and deviation angle distribution of Goss grains (c) in primarily recrystallized Fe-3.25%Si grain-oriented silicon steel (ODF—orientation distribution function; φ₁, φ₂, Φ—Euler angles)
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Fig.3 Microstructures of different secondary recrystallizaton grains (a, c) and (100) pole figures of secondary recrystallization grains (b, d) in Fe-3.25%Si grain-oriented silicon steel after annealing at 1000 ℃ for 100 s (a, b) and 200 s (c, d) (TD—transverse direction, RD—rolling direction)

Fig.4 Macrostructure (a) and (100) pole figure (b) of Fe-3.25%Si grain-oriented silicon steel after complete secondary recrystallization

Fig.5 Deviation angle distribution of Goss secondary recrystallization grains

Fig.6 Grain size contours with variables of e_m_j and initial grain size at the beginning of secondary recrystallization after annealing at 1000 ℃ for 100 s (a) and 200 s (b) (e_m_j—relative grain boundary energy coefficient, Z—Zener factor, t—annealing time, sold line—grain size contour, dash line—critical condition of secondary recrystallization)

Fig.7 Grain size contours with variables of e_m_j and initial grain size under Z=0.071 μm^-1 (a) and Z=0.1 μm^-1 (b) after annealing at 1000 ℃ for 100 s

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