1 State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, China 2 National Centre for Materials Service Safety, University of Science and Technology Beijing, Beijing 100083, China 3 Science and Technology on Advanced High Temperature Structural Materials Laboratory, Beijing Institute of Aeronautical Materials, Beijing 100095, China 4 Beijing Key Laboratory of Special Melting and Reparation of High-End Metal Materials, University of Science and Technology Beijing, Beijing 100083, China
Cite this article:
Zhengrong YU,Xianfei DING,Lamei CAO,Yunrong ZHENG,Qiang FENG. TRANSIENT LIQUID PHASE BONDING OF SECOND AND THIRD GERNERATION Ni-BASED SINGLE CRYSTAL SUPERALLOY WITH Hf-CONTAININGINTERLAYER ALLOY. Acta Metall Sin, 2016, 52(5): 549-560.
A Hf-containing Ni-based alloy was used as the interlayer alloy of TLP bonding for the 2nd (CMSX-4, as-cast condition) and 3rd (SXG3, standard heat treatment condition) generation Ni-based single crystal superalloys containing Re in this work, and the microstructure, composition and micro-hardness of bonding zone were characterized. The results show that the TLP bonding of CMSX-4 and SXG3 alloy were completed after bonded at 1290 ℃ in vacuum for 24 h. These TLP bonding process of CMSX-4 and SXG3 alloys can be explained well using classical TLP model. The diffusion affected zone was not observed during the TLP bonding process. In addition, the heat treatment process of CMSX-4 is shortened by 24 h resulted from the solid solution heat treatment of CMSX-4 alloy has been completed after the process of TLP bonding. The isothermal solidification stage of SXG3 alloy was also accelerated due to the precipitation of HfC at the bonding temperature, resulting in the reduced Hf concentration of Hf in the melting zone. This work also indicates that the interfacial stability of low angle grain boundaries can be investigated by the TLP bonding. The critical misorientation value for discontinuous precipitation of SXG3 alloy along TLP bonding grain boundaries by Hf-containing interlayer alloy was in between 10° and 17° after heat treatment at 1150 ℃.
Fund: Supported by National Natural Science Foundation of China (No.51071016), High Technology Research and Development Program of China (No.2012AA03A511) and Science Foundation of Ministry of Education of China (No.625010337)
Table 1 Nominal compositions of alloys (mass fraction / %)
Fig.1 Schematic of transient liquid phase (TLP) bonding assembles
Fig.2 SEM images of CMSX-4 base alloys (a, f) and TLP bonding zones (b~e) after bonding at 1290 ℃ for 0 h (a), 15 min (b), 6 h (c), 12 h (d), 24 h (e, f) (MZ—melting zone, ISZ—isothermal solidification zone)
Fig.3 Relationships for average width of the MZ (w) (a) and phase fraction of Ni5Hf in the MZ (b) as a function of bonding time (t) at 1290 ℃
Phase
Cr
Co
W
Ta
Al
Ti
Hf
Ni
Ni5Hf
2.5
7.7
-
-
1.0
-
40.3
48.5
γ' phase in eutectic
4.9
9.5
4.9
8.5
6.0
2.0
10.8
53.3
Table 2 Compositions of Ni5Hf and γ' phase in eutectic edge of MZ after bonding at 1290 ℃ for 15 min (mass fraction / %)
Fig.4 SEM image of CMSX-4 alloy MZ and distribution of Hf concentration in γ+γ' eutectic after bonding at 1290 ℃ for 15 min (red line—measure path, yellow line—Hf concentration, EPMA results)
Fig.5 Distributions of Hf concentration in TLP bonding zone and CMSX-4 base alloy after bonding at 1290 ℃ for 6 h (a) and 24 h (b) (The origin of x-axis is the center of bonding zone, EDS results)
Fig.6 Nanoindentation path perpendicular to bonding boundary (a), and hardness and elasticity modulus (b) of CMSX-4 bonding zone and base alloy after bonding at 1290 ℃ for 24 h
Fig.7 SEM images of TLP bonding zone in SXG3 base alloy after bonding at 1290 ℃ for 15 min (a), 6 h (b), 12 h (c) and 24 h (d) (Inset in Fig.7a shows the high magnified image)
Fig.8 SEM image of TLP bonding zone in SXG3 alloy after bonding at 1290 ℃ for 6 h and subsequent water quenching
Fig.9 OM images of bonded SXG3 alloys with different orientations (a) and SEM images of samples with misorientation angles of 10° (b, c) and 17° (d, e) after heat treatment at 1150 ℃ for 5 h (b, d) and 25 h (c, e)
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