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Impact of Residual Oxygen on Hardness of Nano Structured TiN+Si3N4 Film |
MA Dayan; MA Shengli; XU Kewei;S.Veprek |
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Cite this article:
MA Dayan; MA Shengli; XU Kewei; S.Veprek. Impact of Residual Oxygen on Hardness of Nano Structured TiN+Si3N4 Film. Acta Metall Sin, 2004, 40(10): 1037-1040 .
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Abstract Using direct current plasma enhanced chemical vapor
deposition (PCVD) techniques, the
nanocomposite films of nc-TiN + a-Si3N4
were synthesized. The detrimental effects of residual
oxygen on the films hardness were explored. A minor
content of residual oxygen can strongly
decrease the hardness of the superhard film.
Oxygen impurity of 1%-1.5% (atomic fraction) can make the
hardness of film decrease to about 30 GPa as compared to
45-55 GPa for the film with below 0.2% oxygen, which is related to
the formation of SiOx at interface of crystalline.
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Received: 28 November 2003
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