INFLUENCE OF CH_4 ION BEAM ENHANCED DEPOSITION ON HARDNESS OF TiC FILMS

Acta Metall Sin

1994, Vol. 30

Issue (19): 318-322 DOI:

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INFLUENCE OF CH_4 ION BEAM ENHANCED DEPOSITION ON HARDNESS OF TiC FILMS

LIU Changhong;LI Wenzhi;LI Hengde (Tsinghua University; Beijing)

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LIU Changhong;LI Wenzhi;LI Hengde (Tsinghua University; Beijing). INFLUENCE OF CH_4 ION BEAM ENHANCED DEPOSITION ON HARDNESS OF TiC FILMS. Acta Metall Sin, 1994, 30(19): 318-322.

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Abstract Synthesis of TiC films was investigated by dual ion beam deposition. Higher Knoop hardness number on the TiC films prepared by CH_4 ion beam enhanced deposition as comparison with that without CH_4 was obtained. The important reason, which showed by XPS, TEM and AES analyses, may be due to the excess C introduced to the TiC films during ion beam bombardment.

Key words: TiC film ion beam enhanced deposition hardness

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https://www.ams.org.cn/EN/ OR https://www.ams.org.cn/EN/Y1994/V30/I19/318

1MinZhang,LiWenzhi,LiHengde．In:HuangLed．,ThinFilmsandBeam-SolidInteractions．Amsterdam．Elsevier,1991:3462虞觉奇,易文质,陈邦迪,陈宏鉴编译．二元合金状态图集．上海:上海科学技术出版社,1987:2523OguriK,AraiT．ThinSolidFilms．1990;186:L29

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