基于飞秒激光时域热反射法的微尺度<strong>Cu-Sn</strong>金属间化合物热导率研究

doi:10.11900/0412.1961.2021.00216

金属学报

2022, Vol. 58

Issue (12): 1645-1654 DOI: 10.11900/0412.1961.2021.00216

研究论文

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基于飞秒激光时域热反射法的微尺度Cu-Sn金属间化合物热导率研究

周丽君¹^,², 位松¹^,²^,³, 郭敬东¹^,²(

), 孙方远⁴(

), 王新伟⁵, 唐大伟⁵

^1.中国科学院金属研究所沈阳材料科学国家研究中心沈阳 110016
^2.中国科学技术大学材料科学与工程学院沈阳 110016
^3.桂林电子科技大学机电工程学院桂林 541004
^4.北京科技大学能源与环境工程学院北京 100083
^5.大连理工大学能源与动力学院大连 116024

Investigations on the Thermal Conductivity of Micro-Scale Cu-Sn Intermetallic Compounds Using Femtosecond Laser Time-Domain Thermoreflectance System

ZHOU Lijun¹^,², WEI Song¹^,²^,³, GUO Jingdong¹^,²(

), SUN Fangyuan⁴(

), WANG Xinwei⁵, TANG Dawei⁵

^1.Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
^2.School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
^3.School of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, Guilin 541004, China
^4.School of Energy and Environmental Engineering, University of Science and Technology Beijing, Beijing 100083, China
^5.School of Energy and Power Engineering, Dalian University of Technology, Dalian 116024, China

引用本文:

周丽君, 位松, 郭敬东, 孙方远, 王新伟, 唐大伟. 基于飞秒激光时域热反射法的微尺度Cu-Sn金属间化合物热导率研究[J]. 金属学报, 2022, 58(12): 1645-1654.
Lijun ZHOU, Song WEI, Jingdong GUO, Fangyuan SUN, Xinwei WANG, Dawei TANG. Investigations on the Thermal Conductivity of Micro-Scale Cu-Sn Intermetallic Compounds Using Femtosecond Laser Time-Domain Thermoreflectance System[J]. Acta Metall Sin, 2022, 58(12): 1645-1654.

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摘要:

利用双波长飞秒激光时域热反射系统对微尺度Cu-Sn金属间化合物的热输运性能开展研究。利用回流与时效工艺制备Cu-Sn扩散偶，界面处生成均匀连续的Cu₆Sn₅和Cu₃Sn金属间化合物，材料厚度均在微米量级且Cu₆Sn₅的(001)晶面具有明显的择优取向特征。由于实验参数对待测参量的敏感度会影响拟合精度，重点分析了铝传感层厚度与加热光调制频率对金属间化合物热导率测量敏感度的影响，以选定具体的实验参数。经测试，Cu₆Sn₅和Cu₃Sn的热导率分别为47.4和87.6 W/(m·K)，均略高于已有研究报道，分析认为主要是由于样品制备技术不同而导致的材料微观结构差异所致。讨论了加热光斑尺寸、铝传感层厚度及材料比热容的不确定性对热导率测量误差的影响，得到Cu₆Sn₅热导率误差为-6.8%~4.6%，Cu₃Sn热导率误差为-7.1%~4.4%。本工作表明飞秒激光时域热反射技术在电子封装微尺度金属间化合物热输运特性研究方面具备适用性，所得实测数据对于电子封装热设计及可靠性评价有重要参考意义。

关键词 ：飞秒激光, 时域热反射, 金属间化合物, 热导率

Abstract：

An accurate temperature analysis of electronic packaging requires an understanding of the thermal-transport parameters of the material. However, studies on the thermal conductivity of intermetallic compounds (IMCs) in micro-interconnect solder joints are scarce, particularly common IMCs forming in Cu-Sn systems, which seriously affect the precise prediction of the temperature field and thermal stress for electronic packaging structures. This work proposes a novel method to quantitatively measure the thermophysical parameters of Cu-Sn IMCs based on the dual-wavelength femtosecond laser time-domain thermoreflectance (TDTR) system. Cu-Sn diffusion couple samples were prepared using a reflow and aging process. Two layers of Cu₆Sn₅ and Cu₃Sn IMCs formed at the interface with micron thickness, and the (001) crystal plane of Cu₆Sn₅was the preferred orientation. The sensitivity of the experimental parameters to the measurement parameters affects the fitting accuracy. Therefore, before testing, the effects of the aluminum transducer thickness and pump laser modulation frequency on the phase signal sensitivity in the thermal conductivity measurements of Cu₆Sn₅ and Cu₃Sn were analyzed to help select the specific experimental parameters. After testing, the thermal conductivities of Cu₆Sn₅ and Cu₃Sn were 47.4 and 87.6 W/(m·K), respectively, which are slightly higher than the previous results because of the microstructure discrepancy caused by different material preparation techniques. Finally, the influence of the pump laser diameter, aluminum transducer thickness, and material specific heat on the measurement error of thermal conductivity for Cu₆Sn₅ and Cu₃Sn was examined. The test errors of the Cu₆Sn₅and Cu₃Sn thermal conductivity were -6.8%~4.6% and -7.1%~4.4%, respectively. Overall, the TDTR technology can evaluate the thermal-transport characteristics of micron-scale intermetallic compounds in electronic packaging and guide the thermal design and reliability evaluations of electronic components.

Key words： femtosecond laser time-domain thermoreflectance intermetallic compounds thermal conductivity

收稿日期: 2021-05-19

ZTFLH:

TG115.25

基金资助:国家自然科学基金项目(51971231);国家自然科学基金项目(52105327);国家自然科学基金项目(51720105007);国家重大科学仪器开发专项项目(2013YQ120355);中央高校基本科研业务费专项资金项目(FRF-BD-20-09A)

作者简介: 周丽君，女，1989年生，硕士生位松，男，1990年生，博士生(共同第一作者)

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https://www.ams.org.cn/CN/10.11900/0412.1961.2021.00216 或 https://www.ams.org.cn/CN/Y2022/V58/I12/1645

图1 飞秒激光时域热反射(TDTR)实验系统示意图

图2 Cu-Sn扩散偶界面处微观结构的SEM像、EDS分析及XRD谱

图3 Cu6Sn5晶粒取向分布情况

图4 Cu3Sn晶粒取向分布情况

图5 铝传感层厚度和加热光调制频率对Cu6Sn5和Cu3Sn热导率测量所得相位信号敏感度的影响

图6 Cu6Sn5和Cu3Sn热导率测量的相位与幅值信号实验数据与理论拟合曲线

图7 加热光斑直径、铝传感层厚度和材料比热容对Cu6Sn5和Cu3Sn热导率测量结果的影响

表1 Cu6Sn5热导率拟合计算结果及误差统计 (W·m-1·K-1)

表2 Cu3Sn热导率拟合计算结果及误差统计 (W·m-1·K-1)

1	Braun T, Becker K F, Töpper M, et al. Fan-out wafer and panel level packaging—A platform for 3D integration [A]. 5th IEEE Electron Devices Technology and Manufacturing Conference [C]. Chengdu: IEEE, 2021: 1
2	Liu J H, Zhao H Y, Li Z L, et al. Microstructures and mechanical properties of Cu/Sn/Cu structure ultrasonic-tlp joint [J]. Acta Metall. Sin., 2017, 53: 227
2	刘积厚, 赵洪运, 李卓霖等. Cu/Sn/Cu超声-TLP接头的显微组织与力学性能 [J]. 金属学报, 2017, 53: 227
3	Lancaster A, Keswani M. Integrated circuit packaging review with an emphasis on 3D packaging [J]. Integration, 2018, 60: 204 doi: 10.1016/j.vlsi.2017.09.008
4	Lable R, Ruythooren W, Baert K, et al. Resistance to electromigration of purely intermetallic micro-bump interconnections for 3D-device stacking [A]. 2008 International Interconnect Technology Conference [C]. Burlingame: IEEE, 2008: 19
5	Oprins H, Cherman V, Beyne E, et al. Thermal performance comparison of advanced 3D packaging concepts for logic and memory integration in mobile cooling conditions [A]. 17th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems [C]. San Diego: IEEE, 2018: 318
6	Oprins H, Beyne E. Thermal analysis of a 3D flip-chip fan-out wafer level package (fcFOWLP) for high bandwidth 3D integration [A]. 18th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems [C]. Las Vegas: IEEE, 2019: 1234
7	Goodson K E, Flik M I. Solid layer thermal-conductivity measurement techniques [J]. Appl. Mech. Rev., 1994, 47: 101 doi: 10.1115/1.3111073
8	Mcconnell A D, Goodson K E. Thermal conduction in silicon micro- and nanostructures [J]. Annu. Rev. Heat Transfer, 2005, 14: 129 doi: 10.1615/AnnualRevHeatTransfer.v14.120
9	Nishi T, Shibata H, Waseda Y, et al. Thermal conductivities of molten iron, cobalt, and nickel by laser flash method [J]. Metall. Mater. Trans., 2003, 34A: 2801
10	Kim J H, Feldman A, Novotny D. Application of the three omega thermal conductivity measurement method to a film on a substrate of finite thickness [J]. J. Appl. Phys., 1999, 86: 3959 doi: 10.1063/1.371314
11	Al-Ajlan S A. Measurements of thermal properties of insulation materials by using transient plane source technique [J]. Appl. Therm. Eng., 2006, 26: 2184 doi: 10.1016/j.applthermaleng.2006.04.006
12	Bentz D P. Transient plane source measurements of the thermal properties of hydrating cement pastes [J]. Mater. Struct., 2007, 40: 1073 doi: 10.1617/s11527-006-9206-9
13	Ho C Y, Bogaard R H, Gibson C C. Thermophysical and mechanical properties of structural composites and alloys [J]. High Temp.-High Press., 1998, 30: 277 doi: 10.1068/htec178
14	Frederikse H P R, Fields R J, Feldman A. Thermal and electrical properties of copper-tin and nickel-tin intermetallics [J]. J. Appl. Phys., 1992, 72: 2879 doi: 10.1063/1.351487
15	Papadogiannis N A, Moustaïzis S D, Girardeau-Montaut J P. Electron relaxation phenomena on a copper surface via nonlinear ultrashort single-photon photoelectric emission [J]. J. Phys., 1997, 30D: 2389
16	Qiu T Q, Tien C L. Heat transfer mechanisms during short-pulse laser heating of metals [J]. J. Heat Transfer, 1993, 115: 835 doi: 10.1115/1.2911377
17	Cahill D G, Goodson K, Majumdar A. Thermometry and thermal transport in micro/nanoscale solid-state devices and structures [J]. J. Heat Transfer, 2002, 124: 223 doi: 10.1115/1.1454111
18	Capinski W S, Maris H J, Ruf T, et al. Thermal-conductivity measurements of GaAs/AlAs superlattices using a picosecond optical pump-and-probe technique [J]. Phys. Rev., 1999, 59B: 8105
19	Stoner R J, Maris H J. Kapitza conductance and heat flow between solids at temperatures from 50 to 300 K [J]. Phys. Rev., 1993, 48B: 16373
20	Losego M D, Grady M E, Sottos N R, et al. Effects of chemical bonding on heat transport across interfaces [J]. Nat. Mater., 2012, 11: 502 doi: 10.1038/nmat3303 pmid: 22522593
21	Sun F Y, Zhang T, Jobbins M M, et al. Molecular bridge enables anomalous enhancement in thermal transport across hard-soft material interfaces [J]. Adv. Mater., 2014, 26: 6093 doi: 10.1002/adma.201400954
22	Park M S, Gibbons S L, Arróyave R. Phase-field simulations of intermetallic compound growth in Cu/Sn/Cu sandwich structure under transient liquid phase bonding conditions [J]. Acta Mater., 2012, 60: 6278 doi: 10.1016/j.actamat.2012.07.063
23	Lee J B, Hwang H Y, Rhee M W. Reliability investigation of Cu/in TLP bonding [J]. J. Electron. Mater., 2015, 44: 435 doi: 10.1007/s11664-014-3373-1
24	Li J F, Agyakwa P A, Johnson C M. Kinetics of Ag₃Sn growth in Ag-Sn-Ag system during transient liquid phase soldering process [J]. Acta Mater., 2010, 58: 3429 doi: 10.1016/j.actamat.2010.02.018
25	Zhang W, Ruythooren W. Study of the Au/In reaction for transient liquid-phase bonding and 3D chip stacking [J]. J. Electron. Mater., 2008, 37: 1095 doi: 10.1007/s11664-008-0487-3
26	Yu C C, Su P C, Bai S J, et al. Nickel-tin solid-liquid inter-diffusion bonding [J]. Int. J. Precis. Eng. Man., 2014, 15: 143 doi: 10.1007/s12541-013-0317-2
27	Sun F Y, Zhu J, Tang D W. Thermal conductivity measurement of liquids using femto-second laser pump-probe technique [J]. Chinese Sci. Bull., 2015, 60: 1320 doi: 10.1360/N972014-01282
27	孙方远, 祝捷, 唐大伟. 飞秒激光抽运探测方法测量液体热导率 [J]. 科学通报, 2015, 60: 1320
28	Schmidt A J. Optical characterization of thermal transport from the nanoscale to the macroscale [D]. Cambridge: Massachusetts Institute of Technology, 2008
29	Li D, Franke P, Fürtauer S, et al. The Cu-Sn phase diagram part II: New thermodynamic assessment [J]. Intermetallics, 2013, 34: 148 doi: 10.1016/j.intermet.2012.10.010
30	Yang M. Interfacial reaction between tin-based solders and polycrystalline copper pad [D]. Harbin: Harbin Institute of Technology, 2012
30	杨明. 锡基钎料与多晶铜焊盘界面反应行为研究 [D]. 哈尔滨: 哈尔滨工业大学, 2012
31	Gundrum B C, Cahill D G, Averback R S. Thermal conductance of metal-metal interfaces [J]. Phys. Rev., 2005, 72B: 245426

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