STRUCTURE AND MAGNETIC CHARACTER OF NANOSTRUCTURED NiAl ALLOY SYNTHESIZED BY INERT-GAS CONDENSATION
QIN Xiaoying; ZHANG Lide; HOU Bihui; LIANG Renyou; JI Xiaoli(Institute of Solid State Physics; Chinese Academy of Sciences; Hefei 230031)( University of Science and Technology; Hefei 230026 )(Structure Research Laboratory; University of Science and Technology; Hefei 230026 )(Manuscript received 1995-03-13; in revised form 1995-09-18)
Cite this article:
QIN Xiaoying; ZHANG Lide; HOU Bihui; LIANG Renyou; JI Xiaoli(Institute of Solid State Physics; Chinese Academy of Sciences; Hefei 230031)( University of Science and Technology; Hefei 230026 )(Structure Research Laboratory; University of Science and Technology; Hefei 230026 )(Manuscript received 1995-03-13; in revised form 1995-09-18). STRUCTURE AND MAGNETIC CHARACTER OF NANOSTRUCTURED NiAl ALLOY SYNTHESIZED BY INERT-GAS CONDENSATION. Acta Metall Sin, 1996, 32(3): 303-307.
Abstract The structure of nanostructured NiAl(n-NiAl), synthesized by inert-gas condensation, was investigated by X-ray diffraction and TEM. The results indicated that the crystal structure of n-NiAl is same as that of conventional poly-crystalline NiAl alloy(p-NiAl); and the mean grain size of n-NiAl is 8.6 nm. However, there is severe distortion in the crystal lattice of n- NiAl(the distortion ε = 1 .2%); and the long-range ordering degree of n-NiAl is lower than that of p-NiAl. Annealing experiments showed that the grain growth almost did not occur when annealing temperature was lower than 800 K, indicating that n-NiAl is of high resistance to grain growth. In addition, by using electron-spin resonance and magnetization, the strong magnetism(ferro-or antiferromagnetism) of n-NiAl has been ovserved, and it is different from the conventional p-NiAl with weak one. The enhancement of magnetism of n-NiAl would be related to the severe distortion in the crystal lattice and the damage of long-range ordering degree of n-NiAl. Correspondent: QIN Xiaoying, associate professor, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031
