OBSERVATION OF Co FILM OXIDATION ON Si SUBSTRATE

Acta Metall Sin

1994, Vol. 30

Issue (18): 270-272 DOI:

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OBSERVATION OF Co FILM OXIDATION ON Si SUBSTRATE

ZHANG Zaoli; XIAO Zhigang; DU Guowei(University of Science and Technology Beijing)

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ZHANG Zaoli; XIAO Zhigang; DU Guowei(University of Science and Technology Beijing). OBSERVATION OF Co FILM OXIDATION ON Si SUBSTRATE. Acta Metall Sin, 1994, 30(18): 270-272.

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Abstract The oxidation of Co film on Si substrate during heat treatment was studied by TEM and XRD. The oxidized product of the film, annealed below 550℃, was found to be CoO, and to change into a silicide after further heating under vacuum at 900℃. The oxidation of the film has an important effect on the Co/Si interface reaction.

Key words: film cobalt-silicide oxidation

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https://www.ams.org.cn/EN/ OR https://www.ams.org.cn/EN/Y1994/V30/I18/270

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