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| PHOTOELECTROCHEMICAL STUDY ON SEMICONDUCTOR PROPERTIES OF Ni-BASED ALLOYS OXIDE FILMS FORMED IN 288℃ HIGH TEMPERATURE WATER |
| ZHANG Shenghan, TAN Yu, LIANG Kexin |
| School of Environmental Science and Engineering, North China Electric Power University, Baoding 071003 |
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Cite this article:
ZHANG Shenghan TAN Yu LIANG Kexin. PHOTOELECTROCHEMICAL STUDY ON SEMICONDUCTOR PROPERTIES OF Ni-BASED ALLOYS OXIDE FILMS FORMED IN 288℃ HIGH TEMPERATURE WATER. Acta Metall Sin, 2011, 47(9): 1147-1152.
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Abstract The oxide films formed on Ni-based alloys in high temperature water with semiconductor properties were investigated by photoelectrochemical responses. Two Ni-based alloys (Incoloy800HT and Inconel600) were corroded at 288℃ for 100 h in water, and four contributions from the photocurrent are obtained by photoelectrochemical responses. Band gap energy of 2.3 eV is attributed to the presence of nickel hydroxide or nickel-ferrite oxide. Band gap energy of 2.9 and 3.5 eV are attributed to Cr2O3 and band gap energy in the range of 4.1-4.3 eV is attributed to the spinel phase FexNi1-xCr2O4. In the photoelectrochemical responses in function of the applied potential tests, the oxide films on Incoloy800HT alloy indicate n type semiconductor in the potential range from -400 mV\linebreak to +400 mV, and the oxide films on Inconel600 alloy indicate n/p type semiconductor. In addition, the dephasing angle of the photoelectrochemical responses has a 180$^{\circ}$ evolution at the potential where the semiconductor of oxide film turns from n to p type.
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Received: 26 April 2011
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| Fund: Supported by National Natural Science Foundation of China (No.50971059) and Fundamental Research Funds for the Central Universities (No.10QX42) |
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