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低温下含Zn,Ag或Sc的8090合金正电子寿命谱分析 |
高英俊;吴伟明;冯冠之;许少杰;阮向东 |
广西大学 |
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POSITRON ANNIHILATION LIFETIME ANALYSIS OF 8090 ALLOY WITH DOPING Zn, Ag OR Sc UNDER CRYOGENIC TEMPERATURES |
GAO Yingjun; WU Weiming; FENG Guanzhi; XU Shaojie; RUAN Xiangdong(Guangxi University; Nanning 530004)(Manuscript received 94-03-11) |
引用本文:
高英俊;吴伟明;冯冠之;许少杰;阮向东. 低温下含Zn,Ag或Sc的8090合金正电子寿命谱分析[J]. 金属学报, 1995, 31(14): 91-96.
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POSITRON ANNIHILATION LIFETIME ANALYSIS OF 8090 ALLOY WITH DOPING Zn, Ag OR Sc UNDER CRYOGENIC TEMPERATURES[J]. Acta Metall Sin, 1995, 31(14): 91-96.
1蒋晓军.博士学位论文,中国科学院金属研究所,19932KirkegardP,EldrupM.ComputPhysCommum,1974;7:4013郁伟中.正电子湮没寿命谱仪.北京:清华大学出版社,19894 DludekG,KrauseS,KrauseH,BeresinaAL,MikhalenkovVS,ChuistovKV.JPhys:CondensMatter,1992:4:63175JdelRio,NdeDiego,DFink.JPhys:CondensMatter,1989;1:44416蒋晓军,邓文,桂全红,李依依,熊良钺,师昌绪.金属学报,1993;29:A5287DlubekG,KrauseH,KrauseS,LademannP.MaterSciForum,1992,105:9778夏元复,倪新伯,彭郁卿.实验核物理应用方法.北京:科学出版社,19899 邓 文,熊良钺,龙期威,王淑荷,郭建亭.金属学报,1992;28:A442 |
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