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电子束诱导非晶GaAs晶化的形核与长大 |
李志成;刘路;贺连龙;徐永波 |
中国科学院金属研究所沈阳材料科学国家(联合)实验室; 沈阳 110016 |
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Electron-Beam Induced Nucleation and Growth in Amorphous GaAs |
LI Zhicheng; LIU Lu; HE Lianlong; XU Yongbo |
Shenyang National Laboratory for Materials Science; Institute of Metal Research; The Chinese Academy of Sciences; Shenyang 110016 |
引用本文:
李志成; 刘路; 贺连龙; 徐永波 . 电子束诱导非晶GaAs晶化的形核与长大[J]. 金属学报, 2003, 39(1): 13-16 .
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Electron-Beam Induced Nucleation and Growth in Amorphous GaAs[J]. Acta Metall Sin, 2003, 39(1): 13-16 .
[1] Lulli G, Merli P G, Antisari V. Phys Rev B, 1987; 36:8038 [2] Lulli G, Merli P G, Antisari V. In: Aziz M J, Stritzker Beds, Fundamentals of Beam-solid Interactions and Tran-sien Thermal Processing, Pittsburgh: Mater Res SocSymp Proc 100, 1988; 100: 375 [3] Cortocelli F, Lulli G, Merli P G. Phil Mag Lett, 1990; 61:101 [4] Hoehl D, Heera V. Phys Status Solidi, 1990; 122: K35 [5] Bench M W, Robertson I M, Kirk M A, In: Was G S, Rehn L E, Follstaedt D eds, Phase Formation and Modification by Beam-Solid Interactions, Pittsburgh: Mater Res Soc, 1992; 235: 27 [6] Liu M, Xu L Y, Lin X Z. Scanning, 1994; 16: 1 [7] Jencic I, Robertson I M. J Mater Res, 1996; 11: 2152 [8] Jencic I, Bench M W, Robertson I M. J Appl Phys, 1995;78: 974 [9] Li C Z, San Z W, Wu Y Q, He L L, Xu Y P. Ada Metall Sin, 2000; 36: 37(李志成,单智伟,吴亚桥,贺连龙,徐永波.金属学报,2000;36:37 [10] Li Z C, Liu L, He L L, Wu X, Xu Y B. Mater Sci Eng A, 2002; 21: 337 [11] Fisher S B. Radiat Eff, 1970; 5: 239 [12] Meldrum A, Boatner L A, Ewing R C. J Mater Res, 1997; 12: 1816 [13] Spaepen F, Turnbull D, In: Poate J M, Mayer J W eds, Laser Annealing of Semiconductors, New York: Academic, 1982; 112 [14] Sutton M, Yang Y S, Mainville J. Phys Rev Lett, 1989; 629: 288 [15] Lu K, Wang J T. J Crystal Growth, 1991; 112: 525 |
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