MoC掺杂钌基合金无籽晶阻挡层微结构及热稳定性研究

doi:10.11900/0412.1961.2016.00082

金属学报

2017, Vol. 53

Issue (1): 31-37 DOI: 10.11900/0412.1961.2016.00082

本期目录 | 过刊浏览

MoC掺杂钌基合金无籽晶阻挡层微结构及热稳定性研究

邹建雄¹,刘波¹(

),林黎蔚¹,任丁¹,焦国华²,鲁远甫²,徐可为³

1 四川大学原子核科学技术研究所教育部辐射物理及技术重点实验室成都 610064
2 中国科学院深圳先进技术研究院深圳 5180553 西安交通大学金属材料强度国家重点实验室西安 710049

Microstructure and Thermal Stability of MoC DopedRu-Based Alloy Films as Seedless Diffusion Barrier

Jianxiong ZOU¹,Bo LIU¹(

),Liwei LIN¹,Ding REN¹,Guohua JIAO²,Yuanfu LU²,Kewei XU³

1 Key Laboratory of Radiation Physics and Technology of Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China
2 Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
3 State key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China

引用本文:

邹建雄,刘波,林黎蔚,任丁,焦国华,鲁远甫,徐可为. MoC掺杂钌基合金无籽晶阻挡层微结构及热稳定性研究[J]. 金属学报, 2017, 53(1): 31-37.
Jianxiong ZOU, Bo LIU, Liwei LIN, Ding REN, Guohua JIAO, Yuanfu LU, Kewei XU. Microstructure and Thermal Stability of MoC DopedRu-Based Alloy Films as Seedless Diffusion Barrier[J]. Acta Metall Sin, 2017, 53(1): 31-37.

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摘要:

采用磁控共溅射Ru和MoC靶制备非晶RuMoC薄膜。用四探针仪(FPPT)、X射线光电子能谱仪(XPS)、高分辨率透射电镜（HRTEM）和小角掠射X射线衍射仪(GIXRD)表征不同掺杂组分RuMoC薄膜和不同温度退火态Cu/RuMoC/p-SiOC∶H/Si多层膜系的方块电阻、成分和微观结构。结果表明,通过调控Ru膜中掺入Mo和C元素的含量能够实现RuMoC合金薄膜微结构设计及抑制膜体残余氧含量,且当MoC和Ru靶的溅射功率比为0.5时获得的RuMoC II薄膜综合性能最佳;500 ℃退火态RuMoC II薄膜中C-Mo和C-Ru化学键均未出现大量断裂,两者协同作用抑制了RuMoC薄膜再结晶和膜体氧含量升高,是Cu/RuMoC II/p-SiOC∶H/Si多层膜系具有高温热稳定性和优异电学性能的主要机制。

关键词 ：非晶RuMoC, 无籽晶阻挡层, 热稳定性, 非铜互连

Abstract：

Cu has been adopted to replace Al for conduction lines and contact structures in very large-scale integrated circuits due to its low resistivity. However, Cu could rapidly react with the SiO₂-based dielectric under 300 ℃ and form deep level impurities which are strong sink for carriers, leading to the dielectric degradation of the devices. Therefore, it is important to insert a stable barrier between the Cu wiring and SiO₂-based dielectric for suppressing Cu diffusion and improving the adhesive strength. The prediction of international technology roadmap for semiconductors that the thickness of diffusion barrier would be further reduced to 3 nm for 22 nm technology node indicates the widely being used Ta/TaN barrier would be incompetent in the future, since Ta/TaN barrier at the limited thickness exhibits a high resistivity and a columnar grain structure which provides lots of vertical grain boundaries for Cu diffusion. Therefore a directly platable amorphous single barrier with low resistivity is highly desired. In this work, MoC are chosen as impurity to expect for amorphous Ru-based films. The RuMoC films with different components were deposited by RF magnetron co-sputtering with different deposition power ratios of MoC versus Ru targets. The sheet resistances, microstructures and components of the RuMoC films in RuMoC/Si and Cu/RuMoC/p-SiOC∶H/Si structures were studied. The sheet resistances, residual oxygen contents and microstructures of the RuMoC films have close correlation with the doping contents of Mo and C elements which can be easily controlled by tuning the deposition power on MoC target. When the deposition power ratio of MoC versus Ru targets was 0.5, amorphous RuMoC II film with low sheet resistance and residual oxygen content was obtained. After annealing at 500 ℃ the Mo-C and Ru-C bonds were well-preserved and co-suppressed the recrystallization of the film and the increasing of the oxygen content, contributing to excellent thermal stability and electrical properties of Cu/RuMoC II/p-SiOC∶H/Si film.

Key words： amorphous RuMoC film seedless diffusion barrier thermal stability Cu metallization

收稿日期: 2016-03-09

基金资助:资助项目国家自然科学基金项目Nos.11075112和11605116,深圳市科技计划项目Nos.JCYJ20150925163313898和JCYJ-20140417113130693以及深圳市工程实验室项目No.2012-1127

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图1 不同测射功率比(PMoC/PRu)制备的RuMoC薄膜组分和方块电阻变化

图2 沉积态Ru (100 nm)/Si、RuMoC I (100 nm)/Si和RuMoC II (100 nm)/Si薄膜的GIXRD谱,以及沉积态RuMoC II (100 nm)/Si薄膜的HRTEM像及Fourier变换

图3 试样A和B的方块电阻随退火温度变化曲线

图4 试样A和B沉积态和不同温度退火态的GIXRD谱

图5 沉积态和500 ℃退火态RuMoC II样品的C1s、Ru3d和O1s XPS谱

表1 RuMoC II薄膜特征吸收峰峰位及面积占比

图6 试样A 500 ℃退火前后和试样B 400 ℃退火后的J-E曲线

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