EFFECT OF TWINS ON THE STORAGE CAPACITY OF DISLOCATIONS IN SUBMICRON-CRYSTALLINE PURE COPPER
GUO Jinyu; LU Qiuhong; LU Lei
中国科学院金属研究所沈阳材料科学国家(联合)实验室; 沈阳110016
Cite this article:
GUO Jinyu; LU Qiuhong; LU Lei. EFFECT OF TWINS ON THE STORAGE CAPACITY OF DISLOCATIONS IN SUBMICRON-CRYSTALLINE PURE COPPER. Acta Metall Sin, 2006, 42(9): 903-908 .
Abstract A series of ultrafine-crystalline (ufc) pure copper samples with different densities of nano-sized twins were synthesized by means of the electro-deposition technique. Numerous dislocations were induced in the pure copper samples by means of cold rolling. After cold rolling to the deformation degree of 40%, the yield strength of ufc copper sample with high density of nano-sized twins increased from 690 MPa to 850 MPa, while the yield strength of ufc copper sample without twins increased from 230 MPa only to 330 MPa. The difference of strength increment suggests that the copper sample with high density of nano-sized twins has high storage capacity of dislocations.
[1]Mayers M A,Chawla K K.Mechanical Behavior of Materials.Upper Saddle River,N J:Prentice Hall,Inc.,1999:291 [2]Sanders P G,Eastman J A,Weertman J R.Acta Mater,1997; 45:4019 [3]Legros M,Elliott B R,Rittner M N,Weertman J R,Hemker K J.Philos Mag,2000; 80A:1017 [4]Kumar K S,Suresh S,Chisholm M F,Horton J A,Wang P.Acta Mater,2003; 51:387 [5]van Swygenhoven H,Derlet P M,Hasnaoui A.Acta Mater,2004; 52:2251 [6]Yamakov V,Wolf D,Phillpot S E,Mukherjee A K,Gleiter H.Nature Mater,2002; 1:1 [7]Budrovic Z,van Swygenhoven H,Derlet P M,van Petegem S,Schmitt B.Science,2004; 304:273 [8]Wang Y M,Ma E,Chen M W.Appl Phys Lett,2002; 80:2395 [9]Jia D,Wang Y M,Ramesh K T,Ma E,Zhu Y T,Valiev R.Appl Phys Lett,2001; 79:611 [10]Valiev R Z,Islamgaliev R K,Alexandrov I V.Prog Mater Sci,2000; 45:103 [11]Lu L,Shen Y F,Chen X H,Qian L H,Lu K.Science,2004; 304:422 [12]Shen Y F,Lu L,Lu Q H,Jin Z H,Lu K.Scr Mater,2005;52:989 [13]Lu L,Schwaiger R,Shan Z W,Dao M,Lu K,Suresh S.Acta Mater,2005; 52:2169 [14]Ananthan V S,Leffers T,Hansen N.Mater Sci Technol,1991; 7:1069 [15]Babyak W J,Rhines F N.TMS AIME,1960; 218:21 [16]Zhang X,Misra A,Wang H,Lima A L,Hundley M F,Hoagland R G.Appl Phys Lett,2004; 84:1096 [17]Ma E,Wang Y M,Lu Q H,Sui M L,Lu L,Lu K.Appl Phys Lett,2004; 85:4932 [18]Christian J W,Mahajan S.Prog Mater Sci,1995; 39:1 [19]Park K T,Park J H,Lee Y S,Nam W J.Mater Sci Eng,2005; A408:102