Acta Metall Sin  2004, Vol. 40 Issue (12): 1290-1294     DOI:

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MARTENSITIC TWINS REORIENTATION AND STRESS-STRAIN BEHAVIOR OF FERROMAGNETIC SHAPE MEMORY ALLOYS Ni-Mn-Ga SINGLE CRYSTALS

DENG Lifen; LI Yan; JIANG Chengbao; XU Huibin

School of Materials Science and Engineering; Beijing University of Aeronautics and Astronautics; Beijing 100083

DENG Lifen; LI Yan; JIANG Chengbao; XU Huibin. MARTENSITIC TWINS REORIENTATION AND STRESS-STRAIN BEHAVIOR OF FERROMAGNETIC SHAPE MEMORY ALLOYS Ni-Mn-Ga SINGLE CRYSTALS. Acta Metall Sin, 2004, 40(12): 1290-1294 .

Abstract References Related Articles Recommended Metrics Download:  PDF(181KB)  Export:  BibTeX | EndNote (RIS)       Abstract  Ferromagnetic shape memory alloys Ni53Mn23.5Ga23.5, Ni54Mn23Ga23 and Ni50Mn27-Ga23 single crystals were prepared by zone-melting unidirectional solidification. The orientations of the cut single crystals were determined by X-ray diffraction method. The Ni-Mn-Ga crystal growth direction is along [100] with the deviation less than 5 circ. The martensitic twins reorientation process was detected by the stress-strain curves. The compression experiments along different directions were performed, respectively. The results show that the compression improves the texture of favorable martensitic variants and turns them into a single martensitic variant by martensite reorientation. Key words:  shape memory alloy      Ni-Mn-Ga      martensitic twin       Received:  08 May 2004      ZTFLH:  TG139.6   Service E-mail this article Add to citation manager E-mail Alert RSS （） Articles by authors DENG Lifen LI Yan JIANG Chengbao XU Huibin URL:  https://www.ams.org.cn/EN/     OR     https://www.ams.org.cn/EN/Y2004/V40/I12/1290 [1] Webster P J, Ziebeck K R A, Town S L, Peak M S. PhilosMag, 1984; 49B: 295 [2] Ullakko K, Huang J K, Kokorin V V, O' Handley R C.Scr Mater, 1997; 36: 1133 [3] Jiang B H, Zhou W M, Liu Y, Qi X. Mater Sci Forum,2003; 426-432: 2285 [4] Gao Z Y, Cai W, Zhao L G, Wu G H, Chen J L, Zhan WS. Trans Nonferrous Met Soc Chin, 2003; 13(1):42 [5] Murray S J, Marioni M, Allen S M, O' Handley R C. ApplPhys Lett, 2000; 77: 886 [6] Sozinov A, Likhachev A A, Lanska N, Ullakko K. ApplPhys Lett, 2002; 80: 1746 [7] Wu G H, Wang W H, Chen J L, Ao L, Liu Z H, Zhan WS. Appl Phys Lett, 2002; 80: 634 [8] O'Handley R C. 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