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Acta Metall Sin  2025, Vol. 61 Issue (7): 979-997    DOI: 10.11900/0412.1961.2024.00290
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Electromigration of Sn-Based Microbumps in Chip Interconnections of Integrated Circuits: From Physical Nature to Reliability Improvement
HUANG Mingliang(), WANG Shengbo, YOU Haichao, LIU Houlin, REN Jing, HUANG Feifei
Electronic Packaging Materials Laboratory, School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China
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HUANG Mingliang, WANG Shengbo, YOU Haichao, LIU Houlin, REN Jing, HUANG Feifei. Electromigration of Sn-Based Microbumps in Chip Interconnections of Integrated Circuits: From Physical Nature to Reliability Improvement. Acta Metall Sin, 2025, 61(7): 979-997.

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Abstract  

With advancements in miniaturization and performance in advanced packaging technology, the diameter of Sn-based microbumps continues to shrink to the micrometer scale. Consequently, the current density passing through each solder bump increases exponentially as the radius reduces. This emphasizes the critical need to understand the behaviors and mechanisms of electromigration (EM) for the reliability evaluation and design of chip interconnects in integrated circuits. This study systematically summarizes and analyzes the physical nature, key influencing factors and research methods related to the electromigration of Sn-based microbumps. The EM characteristics during the solid-solid EM, including the polarity effect, reverse polarity effect and two-phase separation are reviewed. Similarly, the EM behaviors during the liquid-solid EM, including atomic migration, phase segregation, and phase dissolution, are systematically reviewed. The EM lifetime assessment models and their modifications are evaluated. Furthermore, this study summarizes methods to improve the EM reliability of Sn-based microbumps and outlines prospective research directions and analytical approaches to further improve their reliability in advanced electronic applications.
Key words:  electronic packaging      chip interconnection      Sn-based microbump      electromigration      reliability     
Received:  20 August 2024     
ZTFLH:  TN405  
Fund: National Natural Science Foundation of China(52350321);National Natural Science Foundation of China(U1837208);China Postdoctoral Science Foundation(2024M750313)
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Articles by authors
HUANG Mingliang
WANG Shengbo
YOU Haichao
LIU Houlin
REN Jing
HUANG Feifei

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https://www.ams.org.cn/EN/10.11900/0412.1961.2024.00290     OR     https://www.ams.org.cn/EN/Y2025/V61/I7/979

Axis

Resistivity

10-7 Ω·m

Coefficient of thermal expansion

10-6oC-1

Young's modulus

GPa

Diffusivity in β-Sn (150 oC)

cm2·s-1

Sn self-diffusivity (150 oC)

cm2·s-1

AgCuNi
a1.0115.4522.95.60 × 10-111.99 × 10-73.85 × 10-98.70 × 10-13
c1.5430.5068.93.13 × 10-98.57 × 10-61.17 × 10-44.71 × 10-13
Table 1  Anisotropic properties of β-Sn
Fig.1  Effect of anisotropy of β-Sn grains on electromigration (EM)-induced failure of microbumps[22] (PCB—printed circuit board, RD—rolling direction)
(a) cross-sectional images of the solder bumps
(b) the corresponding EBSD maps in RD (Numbers show the β-Sn grain numbers; insets show the β-Sn grain orient-ations and the corlorkey of β-Sn grains; the same in Figs.2 and 3)
Fig.2  β-Sn grain rotation in microbumps under EM[23] (IMC—intermetallic compound)
(a) 0 h (b) 150 h (c) 250 h (d) 350 h (e) 500 h (f) corresponding EBSD map in RD
Fig.3  Effect of anisotropy of β-Sn grains on the growth behavior of IMCs under EM[24]
(a) 200 h (b) 400 h (c) 600 h (d) 600 h (polished) (e) corresponding EBSD map in RD
Fig.4  EM-induced microstructural evolution of microbumps
(a) crack at the cathode[37] (b) hillocks at the anode[22]
Fig.5  In situ observations of reverse polarity effect during liquid-solid electromigration for the Cu/Sn-9%Zn/Cu interconnect using synchrotron radiation real-time imaging technology (a-i)[14]
Fig.6  In situ observations of migration behavior of Bi atoms during liquid-solid electromigration (L-S EM) for the Cu/Sn-58%Bi/Cu interconnect using synchrotron radiation real-time imaging technology (a-t)[18]
Fig.7  Current driven bonding (CDB) method based on the polarity effect during L-S EM[49]
(a) cross-sectional SEM image of (001) Cu/Cu6Sn5/polycrystalline Cu interconnects
(b) EBSD orientation image maps in RD for interconnect
Fig.8  Effect of UBM combination on EM reliability of solder bumps[88] (UBM—under bump metallization, OSP—organic solderability preservative, ENEPIG—electroless nickel electroless palladium immersion gold)
(a) Ni/SAC305/OSP (b) Ni/SAC305/ENEPIG
Fig.9  Nucleation of Sn droplets on the facets of single-crystal IMCs[95]
(a-c) typical α-CoSn3, PtSn4, and β-IrSn4 single crystals, respectively
(d) a typical example of Sn droplets solidified on the (001) facet of β-IrSn4
(e) summarized pole figures of β-Sn orientations with respect to the largest facets of α-CoSn3, PtSn4, and β-IrSn4
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