| [1]Qu X, Chen Z X, Qi B, Lee T, Wang J J. Microelectron Reliab, 2007; 47: 2197
[2]Kim Y B, Noguchi H, Amagai H. Microelectron Reliab,2006; 46: 459
[3]Kannabiran A, Pannerselvam E T, Ramkumar S M. IEEE Trans Electron Packag Manuf, 2007; 30: 138
[4]Liang J, Downes S, Dariavach N, Shangguan D, Heinrich S M.J Electron Mater, 2004; 33: 1507
[5]Ha S S, Sung J Y, Yoon J W, Jung S B. Microelectron Eng, 2011; 88: 709
[6]Herkommer D, Punch J, Reid M. Microelectron Reliab,2010; 50: 116
[7]Zeng K J, Pierce M, Miyazaki H, Holdford B. J Electron Mater, 2012; 41: 253
[8]Snugovsky P, McCormick H, Bagheri S, Bagheri Z, Hamilton C,Romansky M. J Electron Mater, 2009; 38: 292
[9]Shang H X, Gao J X, Nicholson P I, Kenny S.Microelectron Reliab, 2011; 51: 994
[10]Khatibi G, Wroczewski W, Weiss B, Ipser H.Microelectron Reliab, 2009; 49: 1283
[11]Tu K N, Lee T Y, Jang J W, Li L, Frear D R, Zeng K,Kivilahti J K. Appl Phys, 2001; 89: 4843
[12]Nousiainen O, Putaala J, Kangasvieri T, Rautioaho R,Vahakangas J. J Electron Mater, 2006; 35: 1857
[13]Choubey A, Osterman M, Pecht M. IEEE Trans Device Mater Reliab, 2008; 8: 160
[14]Chuang T H, Cheng C Y, Chang T C. J Electron Mater, 2009; 38: 2762
[15]Koo J M, Jung S B. Microelectron Reliab, 2007; 47:2169
[16]Hsiao H Y, Liu C M, Lin H W, Liu T C, Lu C L, Huang Y S,Chen C, Tu K N. Science, 2012; 336: 1007
[17]Yost F G, Ganyard F P, Kamowsky M M. Metall Mater Trans, 1976; 7A: 1141
[18]Anderson I E, Walleser J W, Harringa J L, Laabs F, Kracher A. J Electron Mater, 2009; 38: 2770
[19]Zhong W H, Chan Y C, Alam M O, Wu B Y, Guan J F. J Alloys Compd, 2006; 414: 123
[20]Koo J M, Vu B Q, Kim Y N, Lee J B, Kim J W, Kim D U, Moon J N, Jung S B. J Electron Mater, 2008; 37: 118
[21]Laurila T, Vuorinen V, Kivilahti J K. Mater Sci Eng, 2005; R49: 1
[22]Lee T K, Ma H T, Liu K C, Xue J. J Electron Mater,2010; 39: 2564
[23]Xu L H, Pang J H L, Che F X. J Electron Mater,2008; 37: 880
[24]Lin H J, Chuang T H. Microelectron Reliab, 2011;51: 445
[25]Lin K S, Huang H Y, Chou C P. J Mater Eng Perform,2009; 18: 182
[26]Yoon J W, Noh B I, Lee Y H, Lee H S, Jung S B.Microelectron Reliab, 2008; 48: 1864
[27]Hang C J, Wang C Q, Mayer M, Tian Y H, Zhou Y, Wang H H.Microelectron Reliab, 2008; 48: 416 |
