PHASE-FIELD CRYSTAL SIMULATION ON EVOLU- TION AND GROWTH KINETICS OF KIRKENDALL VOIDS IN INTERFACE AND INTERMETALLIC COMPOUND LAYER IN Sn/Cu SOLDERING SYSTEM

doi:10.11900/0412.1961.2014.00525

Acta Metall Sin

2015, Vol. 51

Issue (7): 873-882 DOI: 10.11900/0412.1961.2014.00525

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PHASE-FIELD CRYSTAL SIMULATION ON EVOLU- TION AND GROWTH KINETICS OF KIRKENDALL VOIDS IN INTERFACE AND INTERMETALLIC COMPOUND LAYER IN Sn/Cu SOLDERING SYSTEM

Wenjing MA,Changbo KE,Minbo ZHOU,Shuibao LIANG,Xinping ZHANG(

)

School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640

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Wenjing MA,Changbo KE,Minbo ZHOU,Shuibao LIANG,Xinping ZHANG. PHASE-FIELD CRYSTAL SIMULATION ON EVOLU- TION AND GROWTH KINETICS OF KIRKENDALL VOIDS IN INTERFACE AND INTERMETALLIC COMPOUND LAYER IN Sn/Cu SOLDERING SYSTEM. Acta Metall Sin, 2015, 51(7): 873-882.

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Abstract

With the development of electronic products towards further miniaturization, multifunction and high-reliability, the packaging density has been increasing and the dimension of solder joints has been scaling down. In electronic packaging, during the soldering process of Sn/Cu system, an intermetallic compound (IMC) layer is formed at the interface between the molten solder and pad (substrate), the interfacial microstructure plays an important role in the reliability of solder interconnects. Generally, during the reflow soldering and subsequent aging process, a large number of Kirkendall voids may form at the Cu/Cu₃Sn interface and in the Cu₃Sn layer. The existence of Kirkendall voids may increase the potential for brittle interfacial fracture of solder interconnects and reduce the thermal conductivity. Thus, characterization of formation and growth of Kirkendall voids is very important for the evaluation of performance and reliability of solder interconnects. In this work, the formation and growth of Kirkendall voids at the Cu/Cu₃Sn interface and in the Cu₃Sn layer of Sn/Cu solder system have been investigated by means of phase field crystal modeling. The growth mechanism of Kirkendall voids was analyzed. The effects of thickness of Cu₃Sn layer and impurity particles in the Cu₃Sn layer on the growth of Kirkendall voids were discussed. Phase field simulation results show that the growth of Kirkendall voids exhibits four stages during the thermal aging, including the formation of atomic mismatch areas at the Cu/Cu₃Sn interface, the rapid growth of the atomic mismatch areas leading to the formation of Kirkendall voids, the growth of Kirkendall voids and the subsequent coalescence of Kirkendall voids. Kirkendall voids nucleate preferentially at the Cu/Cu₃Sn interface and their sizes increase with the aging time, and the coalescence of the voids can be observed obviously in the later stage of thermal aging. It has also been shown that the increase of the Cu₃Sn layer thickness and the amount of impurity particles lead to an increase in both number and size of Kirkendall voids, as well as an increased growth exponent; and the number of Kirkendall voids increases initially and then decreases with the aging time.

Key words: Kirkendall voids intermetallic compound growth kinetics morphological evolution phase-field crystal method

Fund: Supported by National Natural Science Foundation of China (Nos.51275178 and 51205135) and Research Fund for the Doctoral Program of Higher Education of China (Nos.20110172110003 and 20130172120055)

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	Wenjing MA
	Changbo KE
	Minbo ZHOU
	Shuibao LIANG
	Xinping ZHANG

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https://www.ams.org.cn/EN/10.11900/0412.1961.2014.00525 OR https://www.ams.org.cn/EN/Y2015/V51/I7/873

Table 1 Material parameters used in the simulation of Sn/Cu soldering system^[22]

Fig.2 Simulated morphologies of Kirkendall voids at the Cu/Cu₃Sn interface and in the Cu₃Sn layer at different time steps of t=0.1×10⁵ (a), 3×10⁵ (b), 5×10⁵ (c), 7×10⁵ (d) and the experimental observation of Kirkendall voids^[3] in the Sn-3.0Ag-0.5Cu/Cu joint aged at 217 ℃ for 120 min (e) and 240 min (f)

Fig.3 Simulated morphologies of Kirkendall voids at the Cu/Cu₃Sn interface and in the Cu₃Sn layer at mobilities of M_Cu=1 and M_Sn=0.05 (a), 0.01 (b) and 0.005 (c)

Fig.4 Simulated morphologies of Kirkendall voids at the Cu/Cu₃Sn interface with thickness ratios of Cu₃Sn layer to Cu layer being 1∶1 (a1~a3), 9∶10 (b1~b3) and 4∶5 (c1~c3) at t=0.6×10⁵ (a1, b1, c1), 1×10⁵ (a2, b2, c2) and 7×10⁵ (a3, b3, c3) (Insets show the corresponding enlarged views)

Fig.5 Time dependences of Kirkendall void number at the Cu/Cu₃Sn interface with different Cu₃Sn layer thicknesses

Fig.6 Time dependences of size of Kirkendall void at the Cu/Cu₃Sn interface with different Cu₃Sn layer thicknesses

Table 2 Exponential fitting results of time dependence of size of Kirkendall void at the Cu/Cu₃Sn interface with different Cu₃Sn layer thicknesses

Fig.8 Simulated morphologies of Kirkendall voids at the Cu/Cu₃Sn interfaces with impurity concentrations of 12.98% (a1~a3), 22.26% (b1~b3) and 35.56% (c1~c3) at t=0.6×10⁵ (a1, b1, c1), 1×10⁵ (a2, b2, c2) and 7×10⁵ (a3, b3, c3) (Insets show the corresponding enlarge views)

Fig.9 Time dependences of Kirkendall void number at the Cu/Cu₃Sn interface with different impurity concentrations

Fig.10 Time dependences of Kirkendall void size at the Cu/Cu₃Sn interface with different impurity concentrations

Table 3 Exponential fitting results of time dependence of Kirkendall void size at the Cu/Cu₃Sn interface with different impurity concentrations

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