FIRST-PRINCIPLES STUDY OF OXYGEN ATOM ADSORPTION ON γ-TiAl(111) SURFACE
LI Hong; LIU Limin; WANG Shaoqing; YE Hengqiang
中国科学院金属研究所沈阳材料科学国家(联合)实验室;沈阳 110016
Cite this article:
LI Hong; LIU Limin; WANG Shaoqing; YE Hengqiang. FIRST-PRINCIPLES STUDY OF OXYGEN ATOM ADSORPTION ON γ-TiAl(111) SURFACE. Acta Metall Sin, 2006, 42(9): 897-902 .
Abstract Oxygen atom adsorption on γ-TiAl(111) surface is studied using first-principles approach. The adsorption site with more Ti atoms as its nearest neighbors on the surface layer is found to be preferred. Adsorption energy differences between different adsorption sites become smaller with increasing of oxygen coverage. Electron structure analysis shows the chemisorption is characterized mainly by ionic bonds. The stability of γ-TiAl(111) surfaces are investigated in a range of oxygen chemical potential, which indicated that the clean surface can be energetically stable only when the oxygen chemical potential is very low. For higher oxygen chemical potential the clean surface becomes unstable, therefore, the oxygen atoms start to adsorb on it, and soon come up to high coverage.
[1]Appel F,Wagner R.Mater Sci Eng,1998;22:187 [2]Yun J H,Oh M H,Nam S W,Wee D M,Inui H,Yamaguchi M.Mater Sci Eng,1997; A240:702 [3]Becker S,Rahmel A,Schorr M,Scüze M.Oxid Met,1992;38:425 [4]Rahmel A,Quadakkers W J,Schütze M.Mater Corrs,1995; 46:271 [5]Singheiser L,Quadakkers W J,Shemet V.In:Kim Y W,Dimiduk D M,Loretto M H,eds.,Gamma Titanium Aluminide,Warrendale,PA:TMS,1999:743 [6]Shanabarger M R.Appl Surf Sci,1998; 134:179 [7]Kovács K,Perczel I V,Josepovits V K,Kiss G,Réti F,Dák P.Appl Surf Sci,2000; 200:185 [8]Xiong H P,Mao W,Ma W L,Chen Y F.Acta Metall Sin,2003; 39:744 (熊华平,毛唯.马文利,陈云锋.金属学报,2003;39:744) [9]Dong L M,Cui Y Y,Yang R,Wang F H.Acta Metall Sin,2004; 40:383 (董利民,崔玉友,杨锐,王福会.金属学报,2004;40:383) [10]Wang X J,Chang H W,Lei M K.Acta Metall Sin,2001;37:810 (王兴军,常海威,雷明凯.金属学报,2001;37:810) [11]Kiejna A,Lundqvist B I.Phys Rev,2001; 63B:085405 [12]Kiejna A,Lundqvist B I.Surf Sci,2002; 504:1 [13]Kiejna A.Phys Rev,2003; 68B:235405 [14]Blo(?)ski P,Kiejna A,Hafner J.Surf Sci,2005; 590:88 [15]Tao X M,Tan M Q,Xu X J,Cai J Q,Chen W B,Zhao X X.Acta Phys Sin,2004; 53:3858 (陶向明,谭明秋,徐小军,蔡建秋,陈文斌,赵新新.物理学 ??报;2004;53:3858) [16]Ganduglia-pirovano M V,Scheffler M.Phys Rev,1999;59B:15533 [17]Reuter K,Ganduglia-Pirovano M V,Stnmpfl C,Scheffler M.Phys Rev,2002;65B:165403 [18]Lozovoi A Y,Alavi A,Finnis M W.Phys Rev Lett,2000;85:610 [19]Lozovoi A Y,Alavi A,Finnis M W.Comput Phys Commun,2001; 137:174 [20]Hansen L B,Hammer B.Computer Code Dacapo-2.7.6.Lyngby,Denmark:The Center for Atomic-Scale Materials Physics (CAMP),Technical University of Demark,2004 [21]Hohenberg P,Kohn W.Phys Rev,1964; 136B:864 [22]Kohn W,Sham L J.Phys Rev,1965; 140A:1133 [23]Vanderbilt D.Phys Rev,1990; 41B:7892 [24]Perdew J P,Chevary J A,Vosko S H,Jackson K A,Pederson M A,Singh D J,Fiolhais C.Phys Rev,1992; 46B:6671 [25]Kresse G,Forthmüller J.Comput Mater Sci,1995; 6:15 [26]Press W H,Flannery B P,Teukolsky S A,Vetterling W T.Numerical Recipes.New York,NY:Cambridge University Press,1986 [27]Culot P,Dive G,Nguyen V H,Ghuysen J M.Theor Chim Acta,1992; 82:189 [28]Neugebauer J,Scheffler M.Phys Rev,1992; 46B:16067 [29]Monkhorst H J,Pack J D.Phys Rev,1976; 13B:5188 [30]Brandes E A.Smithells Metal Reference Book.6th ed.,London:Butterworth,1983 [31]Yu R,He L L,Ye H Q.Phys Rev,2002; 65B:184102 [32]Yourdshahyan Y,Razaznejad B,Lundqvist B I.Solid State Commun,2001; 117:531 [33]Bujor M,Larson L A,Poppa H.J Vac Sci Technol,1982;20:392 [34]Hana D J.J Vac Sci Technol,1976; 13:471 [35]Vaquila I,Passeggi M C G,Ferr(?)n J.Surf Sci,1993; 292:L795 [36]Liu L M,Wang S Q,Ye H Q.Acta Mater,2004; 52:3681 [37]Weast R C.CRC Handbook of Chemistry and Physics.70th ed.,Boca Raton,Florida:CRC Press,1990 [38]Liu L M,Wang S Q,Ye H Q.Surf Sci,2004; 550:46