NEW PROCESS FOR SYNTHETIC SiC WHISKERS BY CVD

Acta Metall Sin

1997, Vol. 33

Issue (6): 643-649 DOI:

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NEW PROCESS FOR SYNTHETIC SiC WHISKERS BY CVD

CHEN Weiwu;ZOU Zongshu; WANG Tianming(Northeastern University; Shenyang110006)

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CHEN Weiwu;ZOU Zongshu; WANG Tianming(Northeastern University; Shenyang110006). NEW PROCESS FOR SYNTHETIC SiC WHISKERS BY CVD. Acta Metall Sin, 1997, 33(6): 643-649.

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Abstract SiC whiskers of good quality were easily prepared at 1100℃ - 1300℃ byCVD (chemically-vapour-deposited) with carbonthermal reduction of SiO2 and using a special metal thread as catalyst. The rate of growth, crystalline characteristics and growth method of whiskers were studied by means of optical microscopy and transmissin electronmicroscopy. The thermodynamic conditions, growth mechanism and growth kinetics SiCw inthis method were also discussed.

Key words: synthesis of SiC whisker CVD method growth rate crystalline characteristics kinetic model.

Received: 18 June 1997

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https://www.ams.org.cn/EN/ OR https://www.ams.org.cn/EN/Y1997/V33/I6/643

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