|
|
THE INTERACTION BETWEEN STACKING FAULT AND HYDROGEN IN SINGLE CRYSTAL SILICON |
JIANG Bailin; ZHI Rentao; CHU Wuyang (University of Science and TechnologyBeijing; Beijing 100083) |
|
Cite this article:
JIANG Bailin; ZHI Rentao; CHU Wuyang (University of Science and TechnologyBeijing; Beijing 100083). THE INTERACTION BETWEEN STACKING FAULT AND HYDROGEN IN SINGLE CRYSTAL SILICON. Acta Metall Sin, 1997, 33(6): 573-576.
|
Abstract Hydrogen on the surface of single crystal silicon has been introduced bycathodic charing. The interaction between stacking fault and hydrogen on the surface of thesample has been researched by means of chemical etching. Atomic hydrogen will segregate atoutcrops of the stacking fault and particularly Frank dislocation on the surface of single crystal silicon and compound into molecule hydrogen at the outcrops. The distortion zone induced by hydrogen pressure, which can be detected as etching pit after etching, is preferablylocated at the outcrops of Frank dislocation.
|
Received: 18 June 1997
|
1 Mahajan S, Rozgonyi G A, Brasen D. Appl phys lett. 1977: 30(2): 73 2 Patal J R.J Appl Phys,1977:48:5279 3 Maber D M.J Appl Phys,1976;47:3813 4 Dishman J M.Haszko S E,Marcus R B,Murarka S P,Sheng T T.J ApplPhys,1979:50:2689 5 Jenkins M W J Eleclrochem Soc,1977;124:757 6 Lang A R.J Appl Phys,1958:29:597p |
No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
|
Shared |
|
|
|
|
|
Discussed |
|
|
|
|