AMORPHOUS Cu_(50)Ti_(50) ALLOYINTERLAYER IN DIFFUSION BONDING OF Si_3N_4 CERAMICS

Acta Metall Sin

1994, Vol. 30

Issue (20): 361-365 DOI:

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AMORPHOUS Cu_(50)Ti_(50) ALLOYINTERLAYER IN DIFFUSION BONDING OF Si_3N_4 CERAMICS

ZHAI Yang;REN Jialie ZHUANG Lijun(Tsighua University)

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ZHAI Yang;REN Jialie ZHUANG Lijun(Tsighua University). AMORPHOUS Cu_(50)Ti_(50) ALLOYINTERLAYER IN DIFFUSION BONDING OF Si_3N_4 CERAMICS. Acta Metall Sin, 1994, 30(20): 361-365.

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Abstract An attempt was made to prepare the Cu_(50)Ti_(50) and Cu_(50)Ti_(50)B amorphous alloy interlayers in diffusion bonding of Si_3N_4 ceramic substrates. The amorphous Cu_(50)Ti_(50) interlayer, in comparison with the crystalline one, may improve the technological operation,reduce the diffusion bonding temperature and obviously increase the shearing strength,particularly up to 340 MPa with some B addition. It seems that the mechanism of the diffusion bonding of Si_3N_4 with Cu_(50)Ti_(50) and Cu_(50)Ti_(50)B interlayers is due to an activeelement Ti, which diffuses toward the interface of joint and reacts with Si_3N_4 to form the interface phase, such as TiN, TiSi_2, etc.

Key words: amorphous Cu_(50)Ti_(50) alloy diffusion bonding interlayer Si_3N_4

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https://www.ams.org.cn/EN/ OR https://www.ams.org.cn/EN/Y1994/V30/I20/361

1NakaM,TanakaT,OkamotoⅠ．TransactionofJWEL,1985;14(2):85

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