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BEHAVIOUR OF OXYGEN AND CARBON IN Pt THIN FILM |
WU Yunzhong;DING Qing;XU Meifang;WANG Weiyuan(Shanghai institute of Metallurgy;The Chinese Academy of Sciences)(Manuscript received 17 December;1992;in revised form 5 August;1993) |
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Cite this article:
WU Yunzhong;DING Qing;XU Meifang;WANG Weiyuan(Shanghai institute of Metallurgy;The Chinese Academy of Sciences)(Manuscript received 17 December;1992;in revised form 5 August;1993). BEHAVIOUR OF OXYGEN AND CARBON IN Pt THIN FILM. Acta Metall Sin, 1994, 30(14): 82-85.
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Abstract Behaviours of O_2 and C in Pt thin film were observed by Auger spectroscopy to be limited by diffusion.The activation energy of O_2 diffusion into Pt is different,saying,0.98 and 0.44 eV at higher and lower than 1000℃ respectively.In a range of 550-1000℃ or 1000-1200℃,O_2 diffuses outward or inward Pt film,which may be purified or oxidized respectively.In the temperature range studied,the activation energy of C diffusion is equal to 0.52 eV.Its diffusion behaviour is identical to that of O_2 and the concentration of C in Pt film increases or decreases with increasing or decreasing O_2 content respectively.
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1BerryRJ.SurfSci,1978;76:4152VelhoLR,BartlettRW.MetallTrans,1972;3:653FergusonP,WestmacottKH,FisherRM.MaterSciTechnol,1985;1:53 |
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