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| EFFECT OF MOLE FRACTION OF HF AND H2O2 ON MORPHOLOGY OF POROUS SILICON FORMED BY Ag ASSISTED CHEMICAL ETCHING |
| HE Chunlin 1), YANG Xuefei1), MA Guofeng 1), WANG Jianming 1), ZHAO Dongliang2),CAI Qingkui1) |
1) Liaoning Provincial Key Laboratory of Advanced Materials, Shenyang University, Shenyang 110044
2) Research Institute of Functional Materials, Central Iron & Steel Research Institute, Beijing 100081 |
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Cite this article:
HE Chunlin, YANG Xuefei, MA Guofeng, WANG Jianming, ZHAO Dongliang,CAI Qingkui. EFFECT OF MOLE FRACTION OF HF AND H2O2 ON MORPHOLOGY OF POROUS SILICON FORMED BY Ag ASSISTED CHEMICAL ETCHING. Acta Metall Sin, 2013, 49(8): 989-995.
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Abstract The research of silicon solar cells mainly focuses on reducing cost and improving conversion efficiency, and one of the effective methods of improving photoelectric conversion efficiency of solar cells is to decrease the reflection of incident sunlight onto the light-receiving surface. The porous Si layer can work for the antireflection of Si surfaces, which can be prepared by noble metal assisted chemical etching. In this work, the effects of HF, H2O2 and their volume ratio on morphology and growth of pores on single-crystalline Si surface by using Ag (with a small cluster) metal assisted etching were investigated in order to produce a highly efficient antireflecting structure. The metal particles were deposited onto Si wafer by electroless deposition from a metal salt solution including HF. The surface and cross-sectional morphologies of the porous Si surfaces were observed with field-emission scanning electron microscope. The reflectivity of the etched Si surface was measured with a UV-Vis spectrophotometer equipped with an integrating sphere accessory. The experimental results show that the growth rate and morphology of the pores formed on the Ag metallized Si surfaces are strongly dependent on the volume ratio of HF and H2O2. It is not beneficial for the pore growth when mole fraction ρ=[HF]/([HF]+[H2O2]) is too low or too high, and the etching goes well only whenρ is between 60%—80%; in this case, the pore growth rate is up to 1050—1260 nm/min, and the pores grow straightly and vertically with a relatively large pore density, pore size and connected pore net. The Si surface exhibits an average reflectivity as little as 5.9% in the wave range of 200—1000 nm, showing that a satisfactory antireflection is obtained. Additionally, the growth rate and morphology of the pores also depend on the size and morphology of catalyst Ag particles.
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Received: 12 December 2012
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