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Acta Metall Sin  2016, Vol. 52 Issue (3): 307-312    DOI: 10.11900/0412.1961.2015.00233
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HEAT STABILITY AND SILICONIZING BEHAVIOR OF SURFACE NANOSTRUCTURE OF SILICON STEEL INDUCED BY ASYMMETRIC ROLLING
Gang LIU1(),Chao LI1,Ye MA1,Ruijun ZHANG1,Yongkai LIU1,Yuhui SHA2
1 Research Academy, Northeastern University, Shenyang 110819, China
2 Key Laboratory of Electromagnetic Processing of Materials, Ministry of Education, Northeastern University, Shenyang 110819, China
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Abstract  

Heat stability of nanostructure can be related to alloy element, in order to investigate the effect of external element diffusion, asymmetrical rolling was adopted to roll 3% non-oriented silicon steel to realize the surface nanocrystallization, heat-treatment with different parameters was carried out for the rolled sheet in vacuum and Si+1% (mass fraction) halide powder respectively, and different techniques were used to examine the microstructural evolution, phase transformation and Si distribution along the depth. Experimental results show that nanocrystallines about 10~20 nm in size with random orientations form in the top-surface layer after the asymmetrical rolling with the mismatch speed ratio 1.31 and rolling passes 20 for 91% reduction. In the heating process in vacuum, the recrystallization temperature of the nanocrystallines in the top surface layer of the rolled sheet was found to increase obviously comparing with that obtained after keeping at this temperature for a long duration. In the heating process in Si+1% halide powder, a further enhancement of the recrystallization temperature was observed for the nanocrystallines in the top surface layer of the rolled sheet due to the fastly diffusion of Si atoms along the defaults, then the larger volume fraction of grain boundaries can act as fast diffusion channel at higher temperature (750 ℃), that can accelerate the diffusion of Si atoms, therefore dense compound layer can be obtained within shorter duration and with lower fraction of halide (acts as activator).

Key words:  silicon steel      asymmetric rolling      surface nanocrystallization      heat stability      siliconizing     
Received:  21 April 2015     

Cite this article: 

Gang LIU, Chao LI, Ye MA, Ruijun ZHANG, Yongkai LIU, Yuhui SHA. HEAT STABILITY AND SILICONIZING BEHAVIOR OF SURFACE NANOSTRUCTURE OF SILICON STEEL INDUCED BY ASYMMETRIC ROLLING. Acta Metall Sin, 2016, 52(3): 307-312.

URL: 

https://www.ams.org.cn/EN/10.11900/0412.1961.2015.00233     OR     https://www.ams.org.cn/EN/Y2016/V52/I3/307

Fig.1  TEM images of the top-surface layer of the silicon steel sheets after asymmetric rolling (AR) (a) and following by heating from room-temperature to 750 ℃ in Si+1% halide (b) (Insets show the corresponding SAED patterns)
Fig.2  Cross-sectional OM images of the AR silicon steel sheets after keeping in vacuum at 550 ℃ (a), 600 ℃ (b) and 650 ℃ (c) for 30 min
Fig.3  Cross-sectional OM images of the AR silicon steel sheets after heating from room-temperature to 650 ℃ (a), 750 ℃ (b) and 850 ℃ (c) in vacuum
Fig.4  Cross-sectional OM images of the AR silicon steel sheets after heating from room-temperature to 650 ℃ (a), 750 ℃ (b) and 850 ℃ (c) in Si+1% halide
Fig 5  XRD spectra of the surface layer of the AR silicon steel sheets after heating to different temperatures in Si+1% halide
Fig 6  Cross-sectional SEM image of the AR silicon steel sheet after heating from room-temperature to 750 ℃ in Si+1% halide (Numbers show the mass fraction (%) of Si measured by EDS)
Fig7  Cross-sectional SEM images of the AR silicon steel sheet after heating from room-temperature to 550 ℃ in Si+5% halide and keeping at this temperature for 240 min (a), and to 750 ℃ in Si+1% halide and keeping at this temperature for 30 min (Insets show the Si distributions along the depth)
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