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| COMPOSITION OPTIMIZATION OF Al-Mg-B THIN FILM PROPERTIES PREPERAED BY MAGNETRON SPUTTERING |
| QU Wenchao1, 2), WU Aimin1, 2), WU Zhanling1, 3), BAI Yizhen1, 3), JIANG Xin1, 3, 4) |
1) School of Materials Science and Engineering, Faculty of Mechanical Engineering and Materials Energy, Dalian University of Technology, Dalian 116024
2) Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian 116024
3) School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024
4) Institute of Materials Engineering, University of Siegen, Siegen 57076 |
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Cite this article:
QU Wenchao WU Aimin WU Zhanling BAI Yizhen JIANG Xin. COMPOSITION OPTIMIZATION OF Al-Mg-B THIN FILM PROPERTIES PREPERAED BY MAGNETRON SPUTTERING. Acta Metall Sin, 2011, 47(5): 628-633.
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Abstract Aluminum magnesium boron ternary boride (AlMgB14) possesses high hardness, high-temperature oxidation resistance, high temperature corrosion resistance, low density, low friction and other excellent properties, and could be widely used in tool, mold, micro-mechanical manufacture and aerospace, et al. In this paper, Al-Mg-B films have been prepared by multi-target (high pure aluminum, magnesium and boron targets) magnetron sputtering on the silicon (100) substrate at room temperature. The films with an atomic ratio of Al∶Mg∶B=1∶1∶14 were obtained by controlling the sputtering power and the volume ratio of Al/Mg co-target. X-ray diffraction (XRD) and High resolution transmission electron microscopy (HR-TEM) test results show that all the as-deposited films are amorphous. The X-ray photoelectron spectroscopy (XPS) results showe that there are some B-B and Al-B single bond in the as--deposited films, and the Fourier transform infrared spectroscopy (FTIR) tests indicate further that the films possess B12 icosahedra structure. The hardness of the films as shown by nano indentor test will be increasing with the increase of content of B around B-AlMg isoelectronic line and close to boron--rich side, and up to 32 GPa with low friction coefficients of 0.06-0.08.
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Received: 30 December 2010
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| Fund: Supported by the Fundament Research Funds for the Central Universities (No.DUT10JN08) |
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