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Acta Metall Sin  2016, Vol. 52 Issue (2): 129-134    DOI: 10.11900/0412.1961.2015.00193
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EFFECT OF VOID ON NANOINDENTATION PROCESS OF Ni-BASED SINGLE CRYSTAL ALLOY
Biao YANG1,Bailin ZHENG1(),Xingjian HU1,Pengfei HE1,Zhufeng YUE2
1 Institute of Applied Mechanics, School of Aerospace Engineering and Applied Mechanics, Tongji University, Shanghai 200092, China
2 School of Mechanics and Civil&Architecture, Northwestern Polytechnical University, Xi'an 710072, China
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Abstract  

Nanoindentation of Ni-based single crystal alloy which has a void defect is simulated by the molecular dynamics method. Three models with different voids which have a same radius but different depth (H=1.5 nm, 3.0 nm, 4.5 nm) are contrasted to the perfect model respectively. The influence of a void and misfit dislocation on nanoindentation process are analyzed using center symmetry parameter. Nucleation and growth of dislocation on various indentation depth are researched simultaneously. After relaxation, misfit dislocations occur in all models, which indicates that the void does not affect the generation of misfit dislocation in γ/γ' phase. The indentation load-depth curves show the shallow void (H=1.5 nm) has the greatest influence on nanoindentation. The results demonstrate that the void has two different ways to affect the nanoindentation process. Initially, the void softens the materials when the indentation depth is less than 0.375 nm. However, it will hinder the growth of dislocations because of a kind of surface force, which causes the increase of indentation load while the indentation depth is between 0.375 nm and 0.567 nm. The collapse of a void absorbs the strain energy, so the amount of stacking faults nucleation in γ phase in model with the shallow void is less than which in the perfect model. The indentation load-depth curves show that the indentation load in the H=1.5 nm model is larger than load in the perfect model at 1.263 nm indentation depth. But when the void collapses completely, dislocations tangle around the original location of the void and more stacking faults generate comparing to the perfect model at the same indentation depth h=1.743 nm. So the indentation load declines and becomes smaller than load in perfect model. If the void locates at the interface of γ/γ' phase (H=3.0 nm), it influence the nanoindentation process later than H=1.5 nm model. Dissociation of misfit dislocations is observed when the indentation depth arrives the maximum value 1.748 nm in H=3.0 nm model. Stairs form on the surface of γ phase because of the dissociation of misfit dislocations. There is almost no influence on the nanoindentation of Ni-based single crystal alloy when the void locates in the γ' phase (H=4.5 nm).

Key words:  nanoindentation      molecular dynamics      void      misfit dislocation     
Received:  03 April 2015     
Fund: Supported by Major International (Regional) Joint Research Program of China (No.51210008)

Cite this article: 

Biao YANG,Bailin ZHENG,Xingjian HU,Pengfei HE,Zhufeng YUE. EFFECT OF VOID ON NANOINDENTATION PROCESS OF Ni-BASED SINGLE CRYSTAL ALLOY. Acta Metall Sin, 2016, 52(2): 129-134.

URL: 

https://www.ams.org.cn/EN/10.11900/0412.1961.2015.00193     OR     https://www.ams.org.cn/EN/Y2016/V52/I2/129

Fig.1  Sketch of model (R—radius of indenter, H—depth of void, r—radius of void)
Fig.2  Schematics of simulation models of nanoindentation
Fig.3  Center symmetry parameters (P) of four models after relaxation
Fig.4  Indentation load-depth curves of four models
Fig.5  Maps of P at different indentation depths in Fig.4 for perfect model (a1, b1, c1, d1, e1, f1) and H=1.5 nm model (a2, b2, c2, d2, e2, f2)
Fig.6  Maps of P for H=3.0 nm model at different indentation depth
Fig.7  Maps of P at indentation depth h=1.748 nm
Fig.8  Map of P of γ phase surface at indentation depth h=1.748 nm in H=3.0 nm model
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