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POLARITY GROWTH OF INTERMETALLIC COMPOUND INDUCED BY ELECTROMIGRATION AT THE INTERFACE BETWEEN EUTECTIC SnPb AND Ni(P) FINISHES |
LU Yudong 1;2; HE Xiaoqi 1; EN Yunfei 1; WANG Xin 2; ZHUANG Zhiqiang 2 |
1. National Key Laboratory for Reliability Physics and Application Technology of Electrical Components; the 5th Electronics Research Institute of the Ministry of Information Industry; Guangzhou 510610
2. Key Laboratory of Special Functional Materials; Ministry of Education; College of Materials Science and Engineering; South China University of Technology; Guangzhou 510640 |
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Cite this article:
LU Yudong HE Xiaoqi EN Yunfei WANG Xin ZHUANG Zhiqiang. POLARITY GROWTH OF INTERMETALLIC COMPOUND INDUCED BY ELECTROMIGRATION AT THE INTERFACE BETWEEN EUTECTIC SnPb AND Ni(P) FINISHES. Acta Metall Sin, 2009, 45(2): 178-182.
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Abstract The polarity growth of intermetallic compound (IMC) at the interface between eutectic SnPb BGA solder joints and Ni(P) finishes was investigated and the mechanism of microstructural evaluation was explained by the migration of atoms in interconnects. Ni3Sn4 IMC layer of 2 μm in thickness was formed during the soldering reaction and the subsequent annealing at 120 ℃ can not induce the visible growth of IMC. The IMC layer shows abnormal growth at the anode interface, while the growth at the cathode interface is restrained. Finally, the upper–side and lower–side interfaces of
the same solder joints show polarity effect on the growth of IMC. The polarity effect is related with the flux of atoms in interconnects. The direction of electron flow is consistent with the flux of Sn atoms, while opposite to the flux of Ni atoms. The flux of atoms induced the abnormal growth of IMC at the
anode interface but restrained the growth at cathode interface.
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Received: 16 July 2008
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Fund: Supported by R&D Foundation of the 5th Electronics Research Institute of the Ministry of Information Industry (No.XF0726130) and China Postdoctoral Science Foundation (No.20080430825) |
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