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| COHERENT GROWTH OF α-W FILM ON Si WAFER AND ITS THICKNESS DEPENDENT MECHANICAL AND ELECTRICAL PROPERTIES |
| Mingxia Liu;Yongfeng Hu;FEI MA;Kewei XU |
| 西安交通大学金属材料强度国家重点实验室 |
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Cite this article:
Mingxia Liu; Yongfeng Hu; FEI MA; Kewei XU. COHERENT GROWTH OF α-W FILM ON Si WAFER AND ITS THICKNESS DEPENDENT MECHANICAL AND ELECTRICAL PROPERTIES. Acta Metall Sin, 2008, 44(5): 631-635 .
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Abstract By means of template effect α-W thin films were successfully coherent grown on pre-deposited Mo seed-layer on Si substrates at ambient temperature by magnetron sputtering. Microstructures have been studied by X-ray diffraction, field-emission scanning electron microscopy and high-resolution transmission electron microscopy techniques. Residual stress and electric resistance of thin films were investigated by wafer curvature method and standard four-probe technique. Observations show stable α-W in equiaxial-grain shape is preferred on Mo layer driven by template effect while metastable β-W with non-equiaxed grain structure appears to form on Si substrates. With increasing tungsten film thickness, resistivity and residual stress increase for above two series of samples. For the case of β-W, the thickness dependent properties indeed resulted from increasing grain boundary. Whereas, for α-W case, the constraint of coherent interface between α-W and Mo will dominate electric resistance and residual compressive stress, especially at film thicknesses equal to or smaller than tens of nanometers.
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Received: 15 October 2007
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