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HEAT STABILITY AND SILICONIZING BEHAVIOR OF SURFACE NANOSTRUCTURE OF SILICON STEEL INDUCED BY ASYMMETRIC ROLLING |
Gang LIU1( ),Chao LI1,Ye MA1,Ruijun ZHANG1,Yongkai LIU1,Yuhui SHA2 |
1 Research Academy, Northeastern University, Shenyang 110819, China
2 Key Laboratory of Electromagnetic Processing of Materials, Ministry of Education, Northeastern University, Shenyang 110819, China |
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Cite this article:
Gang LIU, Chao LI, Ye MA, Ruijun ZHANG, Yongkai LIU, Yuhui SHA. HEAT STABILITY AND SILICONIZING BEHAVIOR OF SURFACE NANOSTRUCTURE OF SILICON STEEL INDUCED BY ASYMMETRIC ROLLING. Acta Metall Sin, 2016, 52(3): 307-312.
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Abstract Heat stability of nanostructure can be related to alloy element, in order to investigate the effect of external element diffusion, asymmetrical rolling was adopted to roll 3% non-oriented silicon steel to realize the surface nanocrystallization, heat-treatment with different parameters was carried out for the rolled sheet in vacuum and Si+1% (mass fraction) halide powder respectively, and different techniques were used to examine the microstructural evolution, phase transformation and Si distribution along the depth. Experimental results show that nanocrystallines about 10~20 nm in size with random orientations form in the top-surface layer after the asymmetrical rolling with the mismatch speed ratio 1.31 and rolling passes 20 for 91% reduction. In the heating process in vacuum, the recrystallization temperature of the nanocrystallines in the top surface layer of the rolled sheet was found to increase obviously comparing with that obtained after keeping at this temperature for a long duration. In the heating process in Si+1% halide powder, a further enhancement of the recrystallization temperature was observed for the nanocrystallines in the top surface layer of the rolled sheet due to the fastly diffusion of Si atoms along the defaults, then the larger volume fraction of grain boundaries can act as fast diffusion channel at higher temperature (750 ℃), that can accelerate the diffusion of Si atoms, therefore dense compound layer can be obtained within shorter duration and with lower fraction of halide (acts as activator).
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Received: 21 April 2015
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