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DESIGN CONCEPTS FOR SNAP-ACTING TWO-WAY SHAPE MEMORY DEVICE |
LIN Guangming;CHEN Xingyuan;ZHANG Jinxiu;WANG Yurui Institute of Materials Science; Zhongshan University; Guangzhou Institute of metallurgy; Capital Iron and Steel Company; Beijing LIN Guangming; Department of Physics;Zhongshan University; 510275 Guangzhou |
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Cite this article:
LIN Guangming;CHEN Xingyuan;ZHANG Jinxiu;WANG Yurui Institute of Materials Science; Zhongshan University; Guangzhou Institute of metallurgy; Capital Iron and Steel Company; Beijing LIN Guangming; Department of Physics;Zhongshan University; 510275 Guangzhou. DESIGN CONCEPTS FOR SNAP-ACTING TWO-WAY SHAPE MEMORY DEVICE. Acta Metall Sin, 1989, 25(5): 69-71.
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Abstract Some essential parameters for evaluating the properties of the snap-action two-way shape memory device have been proposed and the principle and method according to whicha practical snap-action device can be designed have also been described.
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Received: 18 May 1989
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1 Otsuka K, Shimizu K. Int Metall Rev, 1986; 31: 93 2 罗来忠,张进修,林光明.金属学报,1989;25:A153 3 林光明,黄元士,张进修.金属学报,待发表 4 林光明,张进修,黄元士.实用新型专利公报,1988; 4(31) :88(授权号87214828. 9) |
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