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| MOLECULAR DYNAMICS SIMULATION OF DEPOSITING LOW–ENERGY ATOM Ti ON Ti(0001) SURFACE |
| HUANG He 1; YAN Chao 2; LAI Xinchun 1; LIU Tianwei 1; ZHANG Qingyu 2 |
1. China Academy of Engineering Physics; Mianyang 621700
2. State Key Laboratory of Materials Modification by Laser; Ion and Electron Beams; Dalian University of Technology;Dalian 116204 |
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Cite this article:
HUANG He YAN Chao LAI Xinchun LIU Tianwei ZHANG Qingyu. MOLECULAR DYNAMICS SIMULATION OF DEPOSITING LOW–ENERGY ATOM Ti ON Ti(0001) SURFACE. Acta Metall Sin, 2009, 45(2): 211-216.
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Abstract Molecular dynamics (MD) with embedded atom method (EAM) was used for describing the variations of adsorption, sputtering and vacancy on surface with energy of incident atom Ti.The results show that a sputtering threshold energy of about 40—50 eV exists in the deposited process, and the incident atom with energy below the threshold value can be thought as deposited atom. Otherwise,the sputtering yield increases linearly with the increase of incident energy. Both distributions of adsorption and sputtering atoms present a 6–rotational symmetry. Adatoms mostly come from surface atoms of the substrate when incident energy is above threshold value, and the probability of incident atoms becoming adatoms is very little. Vacancies distribute mainly on the 1st layer and their amount in the sub–layer increases with the increase of incident energy which is above threshold value.
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Received: 07 July 2008
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| Fund: Supported by NSFC–NSAF (No.10476003) |
| [1] Li D J, Zhang J J, Cao M. Mater Lett, 2007; 61: 4344
[2] Meng L J, Gao J S, Silva R A, Song S G. Thin Solid Films, 2008; 516: 5454
[3] Oehme M, Werner J, Kirfel O, Kasper E. Appl Surf Sci, 2008; 254: 6238
[4] Venkatachalam S, Lida Y, Kanno Y. Superlattices Micostruct, 2008; 44: 127
[5] Wihelmsson O, Eklund P, H¨ogberg H, Hultman L, Jansson U. Acta Mater, 2008; 56: 2563
[6] Guzman L, Wolf G K, Davies G M. Surf Coat Technol, 2004; 174–175: 158
[7] Schwarz G, Friess F, Wolf G K. Surf Coat Technol, 2000;125: 106
[8] Webb R P, Harrison D E Jr. Radiat Eff Lett, 1983; 86: 15
[9] Michely T, Teichert C. Phys Rev, 1994; 50B: 11156
[10] Villarba M, J´onsson H. Surf Sci, 1995; 324: 35
[11] Esch S, Breeman M, Morgenstern M, Michely T, Comsa G. Surf Sci, 1996; 365: 187
[12] Zhang Q Y, Pan Z Y, Tang J Y. Acta Phys Sin, 1999; 8:296
[13] Daw M S, Baskes M I. Phys Rev Lett, 1983; 50: 1285
[14] Daw M S, Baskes M I. Phys Rev, 1984; 29B: 6443
[15] Nelson J S, Daw M S, Sowa E C. Phys Rev, 1989; 40B:1465
[16] Foiles S M, Baskes M I, Daw M S. Phys Rev, 1986; 33B:7983
[17] Wright A F, Daw M S, Fong C Y. Phys Rev, 1990; 42B:9409
[18] Fallis M C, Daw M S, Fong C Y. Phys Rev, 1995; 51B:7817
[19] Zhou X W, Johson R A, Wadley H N G. Phys Rev, 2004;69B: 144113
[20] Steinbr¨uchel Ch. Appl Phys, 1985; 36A: 37
[21] Sigmund P. Phys Rev, 1969; 184: 383
[22] Laegreid N, Wehner G K. Appl Phys, 1961; 32: 365
[23] Whetten T J, Armstead A A, Grzybowski T A. J Vac Sci Technol, 1984; 2: 477
[24] Abrams C F, Graves D B. Appl Phys, 1999; 86: 2263 |
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