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ATOMISTIC SIMULATION OF STRESS-INDUCED CRYSTALLIZATION BEHAVIOR DURING THE INDENTATION PROCESS FOR AMORPHOUS Cu |
WANG Hailong; WANG Xiuxi; WANG Yu; LIANG Haiyi |
Key Laboratory of Mechanical Behavior and Design of Materials of CAS; University of Science and Technology of China; Hefei 230026 |
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Cite this article:
WANG Hailong; WANG Xiuxi; WANG Yu; LIANG Haiyi. ATOMISTIC SIMULATION OF STRESS-INDUCED CRYSTALLIZATION BEHAVIOR DURING THE INDENTATION PROCESS FOR AMORPHOUS Cu. Acta Metall Sin, 2007, 43(3): 259-263 .
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Abstract Molecular dynamics simulations were performed to investigate stress induced crystallization behavior during the indentation process for amorphous Cu. The interaction between atoms in the system adopts the embedded atom method (EAM) reported by Mishin. The Variations of energy, stress and microstructure during the indentation process were studied. The results show that the small grains nucleate at the plastic deformation region, then grow and coalesce with deformation. The local plastic deformation induces the crystal nucleation, grain growth and grain coalescence. The final crystalline phase has an FCC structure which (111) plane is parallel to the shear direction. The nanocrystal grains embedded in the amorphous phase can enhance the rigidity of the sample.
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Received: 05 June 2006
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