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Acta Metall Sin  2007, Vol. 43 Issue (3): 264-268     DOI:
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Low Temperature Au-In-Au Metallic Bonding and its Application in the Fabrication of VCSELs
XIE Zhengsheng; WU Huizhen;LAO Yanfeng; LIU Cheng; CAO Meng
State Key Laboratory of Functional Materials for Informatics; Shanghai Institute of Microsystem and Information Technology; Chinese Academy of Sciences; Shanghai 200050
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XIE Zhengsheng; WU Huizhen; LAO Yanfeng; LIU Cheng; CAO Meng. Low Temperature Au-In-Au Metallic Bonding and its Application in the Fabrication of VCSELs. Acta Metall Sin, 2007, 43(3): 264-268 .

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Abstract  The Au-In-Au low temperature metallic bonding and its application in the structure fabrication of long wavelength vertical cavity surface emitting laser (VCSEL) devices were investigated. The low temperature metallic bonding technic not only improves the thermal characteristic of the bonded devices, but also enhances the reflectivity of the distributed Bragg reflectors (DBR) in the VCSEL structure. The result of Experiments shows that InP based epitaxial VCSEL structure was successfully metallic bonded to the Si substrate at 200 ℃ with high bonding strength, and the bonding quality meets the requirements in the device fabrication of VCSEL. The optical characterization of the bonded samples indicates that the process of low temperature metallic bonding have rarely influence on the optical performance of VCSEL active region and DBR. So this low temperature metallic bonding technic can be used in the structure fabrication of VCSEL devices. And it is expected to be applied in the fabrication of other semiconductor photoelectric devices.
Key words:  low temperature metallic bonding      vertical cavity surface emitting laser      
Received:  10 August 2006     
ZTFLH:  TN365  

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https://www.ams.org.cn/EN/     OR     https://www.ams.org.cn/EN/Y2007/V43/I3/264

[1]Ram R J,Dudley J J,Bowers J E,Yang L,Carey K, Ronner S J,Nauka K.J Appl Phys,1995;78:4227
[2]Sun Y P,Fu Y,Ju B,Wang Y T,Feng Z H,Zhao D G, Zhen X H,Duan L H,Li B C,Zhang S M,Yang H,Jiang Xi M,Zheng W L,Jia Q J.Sci Chin,2002;32 E:584 (孙元平,付羿,渠波,王玉田,冯志宏,赵德刚,郑新和,段俐宏,李秉臣,张书明,杨辉,姜晓明,郑文莉,贾全杰.中国科学,2002;32 E:584)
[3]Horng R H,Wuu D S,Wei S C,Tseng C Y,Huang M F, Chang K H,Liu P H,Lin K C.Appl Phys Lett,1999;75: 3054
[4]Wong W S,Sands T,Cheung N W,Kneissl M,Bour D P, Mei P,Romano L T,Johnson N M.Appl Phys Lett,2000; 77:2822
[5]Jewell J L,Harbison J P,Scherer A,Lee Y H,Florez L T. IEEE J Quant Electron,1991;27:1332
[6]Ram R J,Yang L,Nauka K,Houng Y M,Ludowise M, Mars D E,Dudley J J,Wang S Y.Appl Phys Lett,1993; ??62:2474
[7]Qian Y,Zhu Z H,Lo Y H,Hou H Q,Wang M C,Lin W. IEEE Photonics Lett,1997;9:8
[8]Lin H C,Chang K L,Hsieh K C,Cheng K Y.J Appl Phys, 2002;92:4132
[9]Lao Y F,Wu H Z,Huang Z C.Semicond Sci Technol, 2005;20:615
[10]Lao Y F,Wu H Z.Acta Phys Sin,2005;54:4334 (劳燕锋,吴惠桢.物理学报,2005;54:4334)
[11]Huang Z C,Wu H Z,Lao Y F,Cao M,Liu C.J Cryst Growth,2005;281:255
[12]Huang Z C,Wu H Z.Chin Phys Lett,2004;21:316
[13]Chen Y C,William W S,Lee C C.IEEE Trans Comput, 1997;20A:46
[14]Liu C C,Lin Y K,Houng M P.IEEE Trans Compon Packag Technol,2003;26:635
[15]Lee C C,Choe S.Mater Sci Eng,2005;333A:45
[16]Chu K M,Lee J S,Han S C,Byung S R,Park H H,Duk Y J.Jpn J Appl Phys,2004;43:5922
[17]Jayaraman V,Mehta M,Jackson A W,Wu S,Okuno Y, Piprek J,Bowers J E.IEEE Photon Technol Lett,2003; 15:1495
[18]Sale T E.IEE Proc-Optoelectron,1995;142:37
[19]Yoshitaka O,Chikara A.J Appl Phys,2000;87:2857
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