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| Influence of Bias Voltage on Diamond-Like Carbon Film Deposited by Arc Ion Plating |
| ZOU Yousheng; WANG Wei; ZHENG Jingdi; SUN Chao;HUANG Rongfang; WEN Lishi |
| Institute of Metal Research; The Chinese Academy of Sciences; Shenyang 110016；Shenyang National Laboratory for Materials Science; Institute of Metal Research; The Chinese Academy of Sciences; Shenyang 110016 |
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Cite this article:
ZOU Yousheng; WANG Wei; ZHENG Jingdi; SUN Chao; HUANG Rongfang; WEN Lishi. Influence of Bias Voltage on Diamond-Like Carbon Film Deposited by Arc Ion Plating. Acta Metall Sin, 2004, 40(5): 537-540 .
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Abstract The microstructures of the diamond-like carbon (DLC) films deposited
on Si (100) substrate by using arc ion plating (AIP) under
different pulse bias voltage were characterized using Raman spectra and
X-ray photoelectron spectra (XPS). The results show that the
ratio ID/IG decreases and sp3
bond content increases with
increasing pulse bias voltage firstly, and then the
ratio ID/IG increases and sp3 bond content decreases
after the pulse bias voltage exceeding -200 V.
The minimal ratio ID/IG
is 0.70 and the content of sp3 bond
is 26.7% at the bias voltage of -200 V. The hardness
and modulus determined by using
nanoindentation technique increase
and then decrease with increasing pulse bias voltage. The
hardness and modulus of the DLC films obtained at bias voltage
of -200 V reaches a maximum
value of 30.8 and 250.1 GPa, respectively.
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Received: 26 May 2003
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