REDISTRIBUTION OF IMPURITY ATOMS Al, Si, Mn AND Cu IN PURE Ni DURING LASER MELTING
ZHENG Ling Chongqing Institute of Communications; ZOU Zhirong;LIU Jianglong Chongqing University
Cite this article:
ZHENG Ling Chongqing Institute of Communications; ZOU Zhirong;LIU Jianglong Chongqing University. REDISTRIBUTION OF IMPURITY ATOMS Al, Si, Mn AND Cu IN PURE Ni DURING LASER MELTING. Acta Metall Sin, 1991, 27(4): 151-154.
Abstract An explanation of redistribution of impurity atoms, such as Al, Si Mn and Cu,in pure Ni during lower speed laser melting was made on the basis of proposed analysis mo-del for one-dimension heat transfer, The redistribution of solute along solid-liquid interfaceseems to be the principal reason why the impurity atoms redistributed in depth. The diffusionof the impurity atoms from low to high temperature zone and their selective surface evapora-tion are believed to be noticeably contributed to the distribution.
1 Canova P, Ramous E. J Mater Sci, 1986; 21: 2143 2 Chande T, Mazumder J. J Appl Phys, 1985; 57: 2226 3 Chande T, Mazumder J. Appl Phys Lett, 1982; 41(1) : 42 4 Borovskii I B, Gorodskii D D, Sharafeev M I, Moryashchev F S, Sov Phys Dokl, 1982; 27: 259 5 Hsu S C, Chakravorty S, Mehrabian R. Metall Trans, 1978; B9: 221 6 Steen W M. Lett Heat Mass Trans 1977; 4: 167 7 Mazumder J, Steen W M. J Appl Phys, 1980; 51: 941 8 Clinc H E, Anthony T R. J Appl Phys, 1977; 48: 3895 9 Gregson V G. In: Bass M eds, Laser Material Prceessing, Bosten: North-Holland, 1983: 206 10 Aziz M J. J Appl Phys, 1982; 53: 1158 11 Cahn J W, Coriell S R.,Bcettinger W J. In: White C W, Peeicy P S eds., Laser and Electron Beam Processing of Materials, Preecedings of a Sympesium, Cambiidge, Mass., Novemter, 27--30. 1979, New York: Acacemic Press, 1980: 89 12 Spaepen F, Turnbull D. In: Pcate J M, Mayer J W eds., Laser Annealing in Semiconcuctors, New York: Academic Press, 1982: 15 13 王绍水译.材料的激光加工.北京:科学出版社,1982:315-321