1 School of Materials Science and Engineering, Guangxi University, Nanning 530004, China
2 Foxconn Technology Group, Shenzhen 518109, China
Cite this article:
Zujiang HUANG, Min ZHOU, Yang YANG, Quanzhi CHEN, Shiguang TANG, Weizhou LI. STUDY OF ANODIC ALUMINUM OXIDE FILM AS AN INTERLAYER TO SUPPRESS ELEMENT DIFFUSION. Acta Metall Sin, 2016, 52(3): 341-348.
Element interdiffusion will accelerate failure of surface coating systems after a long time service at high temperature. To extend service life of the coatings, developing a diffusion barrier between the coating and the substrate is considered as an efficient way. Many research results showed that a diffusion barrier with single function such as metallic or ceramic one can not meet requirements for strong barrier ability and strong interfacial strength of the coatings onto the substrate at the same time. Anodic aluminum oxide (AAO) film with porous surface structure, which has an effective role for element diffusion so as to strengthen the interfacial adhesion rapidly, and a dense Al2O3 sublayer to suppress the interdiffusion was effectively used as diffusion barrier in this work and interdiffusion barrier ability was investigated. The AAO film was obtained by anodizing Al film deposited on C103 niobium alloy by vacuum evaporation technology, and an electroplating Ni plating was prepared as an overlayer. Vacuum heat treatment was applied to promote element diffusion. The results indicated that substantial diffusion occurred in the Ni/C103 specimen without an interlayer and in the Ni/Al/C103 specimen with Al film as an interlayer. In the Ni/AAO/C103 specimen, hardly any interdiffusion was observed. After 4 h vacuum annealing at 900 ℃, NbNi3 phase was detected on the Ni/C103 and Ni/Al/C103 specimens, which could not be found in the Ni/AAO/C103 specimen. Nb content in the Ni overlayer of Ni/C103, Ni/Al/C103 and Ni/AAO/C103 specimens was 7.05%, 5.08% and 3.55%, respectively. Ni content in the substrate of Ni/C103, Ni/Al/C103 and Ni/AAO/C103 specimens diffusing from the overlayer was 6.84%, 3.62% and 2.85%, respectively. Thus, AAO film exhibited strong barrier ability in suppressing element diffusion. From calculation of the Fick's law, it was found that diffusion coefficient of Ni and Nb in the AAO film at 900 ℃ was 3.28×10-14 m2/s and 2.16×10-14 m2/s, respectively, and it was raised to 1.03×10-13 m2/s and 3.58×10-14 m2/s at 1000 ℃, respectively.
Fund: Supported by National Natural Science Foundation of China (Nos.51371059, 51361003 and 51001032), Guangxi Natural Science Foundation (No.2014GXNSFCA118013), High-Level Innovative Team and Outstanding School Program in Guangxi Colleges (the Second Batch), Innovative Research Team Project of Guangxi Natural Science Foundation (No.2011GXNSFF018001)
Fig.1 Schematic of positions in the anodic aluminum oxide (AAO) film for EDS analysis
Fig.2 Surface SEM images of the as-deposited coatings (a) vacuum evaporated Al film (b) AAO film (c) Ni plating
Fig.3 XRD patterns of the as-deposited coatings Ni/C103 without interlayer, Ni/Al/C103 with Al film as interlayer and Ni/AAO/C103 with AAO film as interlayer
Fig.4 Surface SEM images of the coatings Ni/C103 (a, b), Ni/Al/C103 (c, d) and Ni/AAO/C103 (e, f) after vacuum annealing at 900 ℃ (a, c, e) and 1000 ℃ (b, d, f) for 4 h
Fig.5 XRD patterns of the coatings Ni/C103, Ni/Al/C103 and Ni/AAO/C103 after vacuum annealing at 900 ℃ and Ni/AAO/C103 at 1000 ℃ for 4 h
Fig 6 Cross-sectional SEM images and EDS analysis selection areas of the coatings Ni/C103 (a), Ni/Al/C103 (b) and Ni/ AAO/C103 (c) after annealing at 900 ℃ for 4 h
Table 1 EDS analysis of element content in different zones of the cross-sectional SEM images in Fig.6
Fig 7 Atomic fraction of Ni (a) and Nb (b) in different distances along cross sections of Ni/AAO/C103 after deposition and annealing at 900 and 1000 ℃
Table 2 Diffusion coefficient of Ni and Nb in the interlayer of Ni/AAO/C103 after annealing at 900 and 1000 ℃
Fig 8 Z (error function argument) linear fitting of Ni (a) and Nb (b) in the interlayer of Ni/AAO/C103 specimen after annealing at 900 and 1000 ℃
[1]
Wang X Y, Xin L, Wei H, Zhu S L, Wang F H.Corros Sci Prot Technol, 2013; 25: 175
[1]
(王心悦, 辛丽, 韦华, 朱圣龙, 王福会. 腐蚀科学与防护技术, 2013; 25: 175)
[2]
Liu Q, Yang Y F, Bao Z B, Zhu S L, Wang F H.Acta Metall Sin, 2014; 50: 1102
[2]
(柳泉, 阳颖飞, 鲍泽斌, 朱圣龙, 王福会. 金属学报, 2014; 50: 1102)
[3]
Li M H, Zhang Z Y, Sun X F, Li J G, Yin F S, Hu W Y, Guan H R, Hu Z Q.Surf Coat Technol, 2003; 165: 241
[4]
Li S, Song J, Zhou C.Intermetallics, 2005; 13: 309
[5]
Li H Q, Gong J, Sun C.Acta Metall Sin, 2012; 48: 579
[5]
(李海庆, 宫骏, 孙超. 金属学报, 2012; 48: 579)
[6]
van der Zwaag S. Self Healing Materials: an Alternative Approach to 20 Centuries of Materials Science. Dordrecht: Springer, 2007: 309
[7]
Li W Z, Wang Q M, Gong J, Sun C, Jiang X.Acta Metall Sin, 2010; 46: 561
[7]
(李伟洲, 王启民, 宫骏, 孙超, 姜辛. 金属学报, 2010; 46: 561)
[8]
Li W Z, Wang Q M, Sun C.Mater Rev, 2009; 23(5): 30
[8]
(李伟洲, 王启民, 孙超. 材料导报, 2009; 23(5): 30)
[9]
Li W Z, Li Y Q, Wang Q M, Sun C, Jiang X.Corros Sci, 2010; 52: 1753
[10]
Ma J, Jiang S M, Gong J, Sun C.Corros Sci, 2011; 53: 2894
[11]
Lou H Y, Wang F H.Vacuum, 1992; 43: 757
[12]
Haynes J A, Zhang Y, Cooley K M, Walker L, Reeves K S, Pint B A.Surf Coat Technol, 2004; 188: 153
[13]
Song Y X, Murakami H, Zhou C G.J Mater Sci Technol, 2011; 27: 280
[14]
Wang Y, Guo H B, Peng H, Peng L Q, Gong S K.Intermetallics, 2011; 19: 191
[15]
Wang Q M, Zhang K, Gong J, Gui Y Y, Sun C, Wen L S.Acta Mater, 2007; 55: 1427
[16]
Li H Q, Wang Q M, Jiang S M, Ma J, Gong J, Sun C.Corros Sci, 2011; 53: 1097
[17]
Cheng Y X, Wang W, Zhu S L, Xin L, Wang F H.Intermetallics, 2010; 18: 736
[18]
Li W Z, Yao Y, Li Y Q, Li J B, Sun C, Jiang X.Mater Sci Eng, 2009; A512: 117
[19]
Heuer A H.J Eur Ceram Soc, 2008; 28: 1495
[20]
Cui J W, Wu Y C, Wang Y, Zheng H M, Xu G Q, Zhang X Y.Appl Surf Sci, 2012; 258: 5305
[21]
Poinern G E J, Ali N, Fawcett D.Materials, 2011; 4: 487
[22]
McQuang M K, Toro A, Geertruyden W V, Misiolek W Z.J Mater Sci, 2011; 46: 243
[23]
Belwalkar A, Grasing E, Geertruyden V W, Huang Z, Misiolek W Z.J Membr Sci, 2008; 319: 192
[24]
Li F Y, Zhang L, Metzger R M.Chem Mater, 1998; 10: 2470
[25]
Galstyan V, Comini E, Faglia G, Sberveglieri G.Cryst Eng Comm, 2014; 16: 10273
[26]
Tzvetkov B T, Bojinov M S, Girginov A A.Bulg Chem Commun, 2008; 40: 261
